Paper Abstract and Keywords |
Presentation |
2016-08-03 14:40
PN-Body Tied Super Steep SS FET with Body Bias below 1V and Drain Bias 0.1V Takahiro Yoshida, Jiro Ida, Takashi Horii (KIT), Masao Okihara (Lapis), Yasuo Arai (KEK) SDM2016-66 ICD2016-34 Link to ES Tech. Rep. Archives: SDM2016-66 ICD2016-34 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have found out that the super steep Subthreshold Slope (SS) of the PN-body tied SOI FET appeared with the body voltage of below 1V. and the drain voltage of 0.1V when the N layer of the body tied region changes from the N+ to the N- . Device simulations reproduced the difference of the necessity body voltage on appearance of the super steep SS between the N+ and the N-. In addition, results of simulation show the optimized width of N layer with both the N+ and the N-. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SS / SOI MOSFET / BIP / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 172, SDM2016-66, pp. 117-121, Aug. 2016. |
Paper # |
SDM2016-66 |
Date of Issue |
2016-07-25 (SDM, ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2016-66 ICD2016-34 Link to ES Tech. Rep. Archives: SDM2016-66 ICD2016-34 |
Conference Information |
Committee |
ICD SDM ITE-IST |
Conference Date |
2016-08-01 - 2016-08-03 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Central Electric Club |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications |
Paper Information |
Registration To |
SDM |
Conference Code |
2016-08-ICD-SDM-IST |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
PN-Body Tied Super Steep SS FET with Body Bias below 1V and Drain Bias 0.1V |
Sub Title (in English) |
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Keyword(1) |
SS |
Keyword(2) |
SOI MOSFET |
Keyword(3) |
BIP |
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1st Author's Name |
Takahiro Yoshida |
1st Author's Affiliation |
Kanazawa Institute of Technology (KIT) |
2nd Author's Name |
Jiro Ida |
2nd Author's Affiliation |
Kanazawa Institute of Technology (KIT) |
3rd Author's Name |
Takashi Horii |
3rd Author's Affiliation |
Kanazawa Institute of Technology (KIT) |
4th Author's Name |
Masao Okihara |
4th Author's Affiliation |
LAPIS Semiconductor (Lapis) |
5th Author's Name |
Yasuo Arai |
5th Author's Affiliation |
High Energy Accelerator Research Organization (KEK) |
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Speaker |
Author-1 |
Date Time |
2016-08-03 14:40:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2016-66, ICD2016-34 |
Volume (vol) |
vol.116 |
Number (no) |
no.172(SDM), no.173(ICD) |
Page |
pp.117-121 |
#Pages |
5 |
Date of Issue |
2016-07-25 (SDM, ICD) |
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