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| Presentation | 2016-06-29 16:40 MoS2 film formation by RF magnetron sputtering for thin film transistors Takumi Ohashi, Kentaro Matsuura (Tokyo Tech), Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech)  SDM2016-46 Link to ES Tech. Rep. Archives: SDM2016-46 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Multi-layered MoS2 has been expected as a new candidate for complementary TFT material owing to its promising characteristics such as flexibility, transparency, and high mobility in atomically thin region. Conventionally, an exfoliation method is mainly utilized to form MoS2, however, for practical application, it has many difficulties such as film uniformity, controllability of thickness, and controllability of impurities. In this study, we applied an RF magnetron sputtering method, which is a compatible method with conventional LSI technology, and leads to form the film largely in comparatively low temperature. As a result, five layers of MoS2 film was successfully formed on a SiO2/Si substrate. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Molybdenum Disulfide (MoS2) / Sputtering Method / Thin Film Transistor (TFT) / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 118, SDM2016-46, pp. 75-78, June 2016. | |
| Paper # | SDM2016-46 | |
| Date of Issue | 2016-06-22 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
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| Download PDF | SDM2016-46 Link to ES Tech. Rep. Archives: SDM2016-46 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2016-06-29 - 2016-06-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Campus Innovation Center Tokyo |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2016-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | MoS2 film formation by RF magnetron sputtering for thin film transistors |
| Sub Title (in English) | |
| Keyword(1) | Molybdenum Disulfide (MoS2) |
| Keyword(2) | Sputtering Method |
| Keyword(3) | Thin Film Transistor (TFT) |
| Keyword(4) | |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takumi Ohashi |
| 1st Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 2nd Author's Name | Kentaro Matsuura |
| 2nd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 3rd Author's Name | Seiya Ishihara |
| 3rd Author's Affiliation | Meiji University (Meiji Univ.) |
| 4th Author's Name | Yusuke Hibino |
| 4th Author's Affiliation | Meiji University (Meiji Univ.) |
| 5th Author's Name | Naomi Sawamoto |
| 5th Author's Affiliation | Meiji University (Meiji Univ.) |
| 6th Author's Name | Kuniyuki Kakushima |
| 6th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 7th Author's Name | Kazuo Tsutsui |
| 7th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 8th Author's Name | Atsushi Ogura |
| 8th Author's Affiliation | Meiji University (Meiji Univ.) |
| 9th Author's Name | Hitoshi Wakabayashi |
| 9th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
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| Speaker | Author-1 |
| Date Time | 2016-06-29 16:40:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2016-46 |
| Volume (vol) | vol.116 |
| Number (no) | no.118 |
| Page | pp.75-78 |
| #Pages | 4 |
| Date of Issue | 2016-06-22 (SDM) |
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