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| Presentation | 2016-06-29 13:30 A resistive switching device based on breakdown and local anodic oxidation Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech.)  SDM2016-38 Link to ES Tech. Rep. Archives: SDM2016-38 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We propose a resistive switching device with CeOx and SiO2 stacked layers on a Si substrate. Breakdown spots are created in the SiO2 layer upon positive voltage application to the top electrode due to large contrast in the dielectric constant, resulting in the transition to low resistive state. With negative voltage application, oxygen ions in CeOx layer drift into the spot, anodically re-creating SiO2 which change the state to high resistance state. A device operation based on the bipolar-type switching mechanism is experimentally demonstrated. The set voltage has been found to follow the difference in the work functions of the bottom Si substrates, p+Si and n+Si, as well as fixed charges and the degradation in the interface state density. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | resistive switching memory / breakdown / local anodic oxidation / work function / interface state density / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 118, SDM2016-38, pp. 33-36, June 2016. | |
| Paper # | SDM2016-38 | |
| Date of Issue | 2016-06-22 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2016-38 Link to ES Tech. Rep. Archives: SDM2016-38 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2016-06-29 - 2016-06-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Campus Innovation Center Tokyo |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2016-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A resistive switching device based on breakdown and local anodic oxidation |
| Sub Title (in English) | |
| Keyword(1) | resistive switching memory |
| Keyword(2) | breakdown |
| Keyword(3) | local anodic oxidation |
| Keyword(4) | work function |
| Keyword(5) | interface state density |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kuniyuki Kakushima |
| 1st Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 2nd Author's Name | Hitoshi Wakabayashi |
| 2nd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 3rd Author's Name | Kazuo Tsutsui |
| 3rd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 4th Author's Name | Hiroshi Iwai |
| 4th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
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| Speaker | Author-1 |
| Date Time | 2016-06-29 13:30:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2016-38 |
| Volume (vol) | vol.116 |
| Number (no) | no.118 |
| Page | pp.33-36 |
| #Pages | 4 |
| Date of Issue | 2016-06-22 (SDM) |
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