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| Presentation | 2016-05-20 09:55 Annealing of p-type wide-gap CuxZnyS thin films deposited by the photochemical deposition method Bayingaerdi Tong, Masaya Ichimura (NITech)  ED2016-22 CPM2016-10 SDM2016-27 Link to ES Tech. Rep. Archives: ED2016-22 CPM2016-10 SDM2016-27 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Zn-rich of CuxZnyS is a transparent p-type semiconductor. We prepared the CuxZnyS thin films by the photochemical deposition method, and investigated changes in properties due to annealing. The sample before annealing was amorphous, and its composition was Cu: Zn: S: O = 0.02: 0.34: 0.43: 0.21. The band gap was estimated to be about 3.5 eV from the optical transmission measurement. p-type conductivity was confirmed by the photoelectrochemical measurement. After annealing at 400ºC for 1 h, formation of the ZnS phase was observed by X-ray diffraction measurement. While the band gap did not change significantly, the conductivity type became close to intrinsic. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Photochemical deposition (PCD) / CuxZnyS / Transparent semiconductor / Sulfur annealing / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 48, ED2016-22, pp. 43-46, May 2016. | |
| Paper # | ED2016-22 | |
| Date of Issue | 2016-05-12 (ED, CPM, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2016-22 CPM2016-10 SDM2016-27 Link to ES Tech. Rep. Archives: ED2016-22 CPM2016-10 SDM2016-27 |
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| Conference Information | |
| Committee | CPM ED SDM |
| Conference Date | 2016-05-19 - 2016-05-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Shizuoka University, Hamamatsu campus (Joint Research Lab.) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | crystal growth、devices characterization , etc. |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2016-05-CPM-ED-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Annealing of p-type wide-gap CuxZnyS thin films deposited by the photochemical deposition method |
| Sub Title (in English) | |
| Keyword(1) | Photochemical deposition (PCD) |
| Keyword(2) | CuxZnyS |
| Keyword(3) | Transparent semiconductor |
| Keyword(4) | Sulfur annealing |
| Keyword(5) | |
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| 1st Author's Name | Bayingaerdi Tong |
| 1st Author's Affiliation | Nagoya Institute of Technology (NITech) |
| 2nd Author's Name | Masaya Ichimura |
| 2nd Author's Affiliation | Nagoya Institute of Technology (NITech) |
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| Speaker | Author-1 |
| Date Time | 2016-05-20 09:55:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2016-22, CPM2016-10, SDM2016-27 |
| Volume (vol) | vol.116 |
| Number (no) | no.48(ED), no.49(CPM), no.50(SDM) |
| Page | pp.43-46 |
| #Pages | 4 |
| Date of Issue | 2016-05-12 (ED, CPM, SDM) |
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