Paper Abstract and Keywords |
Presentation |
2016-04-21 11:30
A 5.8 GHz-band high efficiency rectifier with a low resistance and high breakdown voltage GaAs Schottky Barrier Diode Marika Nakamura, Yutaro Yamaguchi, Masaomi Tsuru, Yasuki Aihara, Jun Shimokawatoko, Yukihiro Homma, Eiji Taniguchi (Mitsubishi Electric Co.) WPT2016-3 MW2016-3 Link to ES Tech. Rep. Archives: MW2016-3 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
High RF-DC conversion efficiency at high input power are required for rectifiers used in receivers of the microwave power transmission systems, such as space solar power systems. Low RC product and high breakdown voltage are required to realize high efficiency. In this paper, the 5.8 GHz-band rectifier, with the high breakdown voltage GaAs Schottky barrier diode (SBD) is described which resistance is reduced by thinning the n-GaAs thickness. The fabricated rectifier archived 81.7% RF-DC conversion efficiency at the input power of 26 dBm. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Space Solar Power Systems / Microwave Wireless Power Transmission / Rectenna / Rectifier / 5.8 GHz-band / / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 12, WPT2016-3, pp. 11-15, April 2016. |
Paper # |
WPT2016-3 |
Date of Issue |
2016-04-14 (WPT, MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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