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| Presentation | 2016-04-14 13:00 [Invited Lecture] Visualization of Filament of ReRAM during Resistive Switching by in-situ Transmission Electron Microscopy Yasuo Takahashi (Hokkaido Univ.), Masaki Kudo (Kyusyu Univ.), Masashi Arita (Hokkaido Univ.)  ICD2016-5 Link to ES Tech. Rep. Archives: ICD2016-5 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Resistive random access memories (ReRAMs) have been investigated as a next generation non-volatile memory, where 16-Gbit cells have been demonstrated. It is important to understand the switching mechanism of ReRAMs in order to in order to guarantee the reliability. Here, in-situ transmission electron microscopy (TEM), in which high-resolution TEM image observation is carried out during the electrical measurements, is applied to analysis of the 30-nm Cu-Te-based ReRAM operation. Switching characteristics, which are almost the same as those measured at the outside of TEM by the use of conventional ReRAM cells, are achieved together with clear images of formation and rupture of conductive filaments corresponding to the low and high resistance states. In addition, retention characteristics longer than 106 s, and SET/RESET pulse operation more than 100k times are confirmed during TEM observation. These results indicate that the in-situ TEM will be a powerful tool to analyze the reliability of ReRAMs and to find out the origin of the failures. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | in-situ transmission electron microscopy / Resistive random access memory / in-situ TEM / ReRAM / CBRAM / reliability / / | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 3, ICD2016-5, pp. 21-26, April 2016. | |
| Paper # | ICD2016-5 | |
| Date of Issue | 2016-04-07 (ICD) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ICD2016-5 Link to ES Tech. Rep. Archives: ICD2016-5 |
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| Conference Information | |
| Committee | ICD |
| Conference Date | 2016-04-14 - 2016-04-15 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ICD |
| Conference Code | 2016-04-ICD |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Visualization of Filament of ReRAM during Resistive Switching by in-situ Transmission Electron Microscopy |
| Sub Title (in English) | |
| Keyword(1) | in-situ transmission electron microscopy |
| Keyword(2) | Resistive random access memory |
| Keyword(3) | in-situ TEM |
| Keyword(4) | ReRAM |
| Keyword(5) | CBRAM |
| Keyword(6) | reliability |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yasuo Takahashi |
| 1st Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 2nd Author's Name | Masaki Kudo |
| 2nd Author's Affiliation | Kyusyu University (Kyusyu Univ.) |
| 3rd Author's Name | Masashi Arita |
| 3rd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
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| Speaker | Author-1 |
| Date Time | 2016-04-14 13:00:00 |
| Presentation Time | 25 minutes |
| Registration for | ICD |
| Paper # | ICD2016-5 |
| Volume (vol) | vol.116 |
| Number (no) | no.3 |
| Page | pp.21-26 |
| #Pages | 6 |
| Date of Issue | 2016-04-07 (ICD) |
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