Paper Abstract and Keywords |
Presentation |
2016-04-14 14:50
[Invited Lecture]
A Triple-Protection Structured COB FRAM with 1.2-V Operation and 1E17-Cycle Endurance Hitoshi Saito, Ko Nakamura, Soichiro Ozawa, Naoya Sashida, Satoru Mihara, Yukinobu Hikosaka, Wensheng Wang, Tomoyuki Hori, Kazuaki Takai, Mitsuharu Nakazawa, Noboru Kosugi, Makoto Hamada, Shoichiro Kawashima, Takashi Eshita, Masato Matsumiya (FSL) ICD2016-9 Link to ES Tech. Rep. Archives: ICD2016-9 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have developed a ferroelectric RAM (FRAM) with a low operation voltage of 1.2 V and a high switching endurance up to 1E17 cycles. Our newly developed triple- protection structured cell array, has constructed without an additional mask step, effectively protects 0.4-μm^2 ferroelectric capacitors from hydrogen and moisture degradation. We have designed our capacitor-over-bit-line (COB) structure to have a small cell size of 0.5-μm^2. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
FRAM / PZT / COB / low voltage operation / high switching endurance / triple-protection structure / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 3, ICD2016-9, pp. 45-49, April 2016. |
Paper # |
ICD2016-9 |
Date of Issue |
2016-04-07 (ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ICD2016-9 Link to ES Tech. Rep. Archives: ICD2016-9 |
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