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| Presentation | 2016-04-09 09:30 [Invited Talk] Nonvolatile Memory Applications Using Oxide Thin-Film Transistors Sung-Min Yoon, So-Jung Kim, Min-Ji Park, Da-Jeong Yun (Kyung Hee Univ.)  SDM2016-12 OME2016-12 Link to ES Tech. Rep. Archives: SDM2016-12 OME2016-12 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The embeddable nonvolatile memory devices with such characteristics as mechanical flexibility and/or transparency to the visible light can provide us very interesting applications. In this presentation, charge-trap type nonvolatile memory thin-film transistors (TFTs) and their device characteristics will be introduced, in which all-oxide gate-stack is composed of blocking, charge-trap, tunneling, and active oxide layers. Prototype transparent memory TFTs were fabricated and characterized and promising memory behaviors were successfully obtained. Finally, future perspectives for the nonvolatile memory applications using the oxide TFTs will be summarized. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Nonvolatile Memory / Thin-Film Transistor / Oxide Semiconductor / Charge-Trap / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 1, SDM2016-12, pp. 49-52, April 2016. | |
| Paper # | SDM2016-12 | |
| Date of Issue | 2016-04-01 (SDM, OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2016-12 OME2016-12 Link to ES Tech. Rep. Archives: SDM2016-12 OME2016-12 |
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| Conference Information | |
| Committee | SDM OME |
| Conference Date | 2016-04-08 - 2016-04-09 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawa Prefectural Museum & Art Museum |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Thin film devices, etc |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2016-04-SDM-OME |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Nonvolatile Memory Applications Using Oxide Thin-Film Transistors |
| Sub Title (in English) | |
| Keyword(1) | Nonvolatile Memory |
| Keyword(2) | Thin-Film Transistor |
| Keyword(3) | Oxide Semiconductor |
| Keyword(4) | Charge-Trap |
| Keyword(5) | |
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| 1st Author's Name | Sung-Min Yoon |
| 1st Author's Affiliation | Kyung Hee University (Kyung Hee Univ.) |
| 2nd Author's Name | So-Jung Kim |
| 2nd Author's Affiliation | Kyung Hee University (Kyung Hee Univ.) |
| 3rd Author's Name | Min-Ji Park |
| 3rd Author's Affiliation | Kyung Hee University (Kyung Hee Univ.) |
| 4th Author's Name | Da-Jeong Yun |
| 4th Author's Affiliation | Kyung Hee University (Kyung Hee Univ.) |
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| Speaker | Author-1 |
| Date Time | 2016-04-09 09:30:00 |
| Presentation Time | 40 minutes |
| Registration for | SDM |
| Paper # | SDM2016-12, OME2016-12 |
| Volume (vol) | vol.116 |
| Number (no) | no.1(SDM), no.2(OME) |
| Page | pp.49-52 |
| #Pages | 4 |
| Date of Issue | 2016-04-01 (SDM, OME) |
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