Paper Abstract and Keywords |
Presentation |
2016-04-09 10:50
Device simulation analysis of carrier transport in In-Ga-Zn-O thin-film transistors
-- Influence of carrier concentration in back-channel region -- Daichi Koretomo, Tatsuya Toda (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Mamoru Furuta (KUT) SDM2016-14 OME2016-14 Link to ES Tech. Rep. Archives: SDM2016-14 OME2016-14 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The influence of high carrier concentration region in In-Ga-Zn-O (IGZO ) on the electrical properties of a bottom-gate IGZO TFT was investigated by varying the sheet carrier concentration (Ns). Device simulation and experimental results clarified that the current flow line in the channel and an effective channel length were strongly influenced by the high carrier concentration region formed at a back-channel interface. This result indicated that the IGZO TFT with double active layers can fabricate short channel TFT. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
InGaZnO (IGZO) / Thin-Film transistor (TFT) / Device simulation / ATLAS / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 1, SDM2016-14, pp. 57-60, April 2016. |
Paper # |
SDM2016-14 |
Date of Issue |
2016-04-01 (SDM, OME) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2016-14 OME2016-14 Link to ES Tech. Rep. Archives: SDM2016-14 OME2016-14 |
Conference Information |
Committee |
SDM OME |
Conference Date |
2016-04-08 - 2016-04-09 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Okinawa Prefectural Museum & Art Museum |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Thin film devices, etc |
Paper Information |
Registration To |
SDM |
Conference Code |
2016-04-SDM-OME |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Device simulation analysis of carrier transport in In-Ga-Zn-O thin-film transistors |
Sub Title (in English) |
Influence of carrier concentration in back-channel region |
Keyword(1) |
InGaZnO (IGZO) |
Keyword(2) |
Thin-Film transistor (TFT) |
Keyword(3) |
Device simulation |
Keyword(4) |
ATLAS |
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1st Author's Name |
Daichi Koretomo |
1st Author's Affiliation |
Kochi Univercity of Technology (KUT) |
2nd Author's Name |
Tatsuya Toda |
2nd Author's Affiliation |
Kochi Univercity of Technology (KUT) |
3rd Author's Name |
Tokiyoshi Matsuda |
3rd Author's Affiliation |
Ryukoku University (Ryukoku Univ.) |
4th Author's Name |
Mutsumi Kimura |
4th Author's Affiliation |
Ryukoku University (Ryukoku Univ.) |
5th Author's Name |
Mamoru Furuta |
5th Author's Affiliation |
Kochi Univercity of Technology (KUT) |
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Speaker |
Author-1 |
Date Time |
2016-04-09 10:50:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2016-14, OME2016-14 |
Volume (vol) |
vol.116 |
Number (no) |
no.1(SDM), no.2(OME) |
Page |
pp.57-60 |
#Pages |
4 |
Date of Issue |
2016-04-01 (SDM, OME) |
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