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Paper Abstract and Keywords
Presentation 2016-04-09 10:50
Device simulation analysis of carrier transport in In-Ga-Zn-O thin-film transistors -- Influence of carrier concentration in back-channel region --
Daichi Koretomo, Tatsuya Toda (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Mamoru Furuta (KUT) SDM2016-14 OME2016-14 Link to ES Tech. Rep. Archives: SDM2016-14 OME2016-14
Abstract (in Japanese) (See Japanese page) 
(in English) The influence of high carrier concentration region in In-Ga-Zn-O (IGZO ) on the electrical properties of a bottom-gate IGZO TFT was investigated by varying the sheet carrier concentration (Ns). Device simulation and experimental results clarified that the current flow line in the channel and an effective channel length were strongly influenced by the high carrier concentration region formed at a back-channel interface. This result indicated that the IGZO TFT with double active layers can fabricate short channel TFT.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaZnO (IGZO) / Thin-Film transistor (TFT) / Device simulation / ATLAS / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 1, SDM2016-14, pp. 57-60, April 2016.
Paper # SDM2016-14 
Date of Issue 2016-04-01 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2016-14 OME2016-14 Link to ES Tech. Rep. Archives: SDM2016-14 OME2016-14

Conference Information
Committee SDM OME  
Conference Date 2016-04-08 - 2016-04-09 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa Prefectural Museum & Art Museum 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Thin film devices, etc 
Paper Information
Registration To SDM 
Conference Code 2016-04-SDM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Device simulation analysis of carrier transport in In-Ga-Zn-O thin-film transistors 
Sub Title (in English) Influence of carrier concentration in back-channel region 
Keyword(1) InGaZnO (IGZO)  
Keyword(2) Thin-Film transistor (TFT)  
Keyword(3) Device simulation  
Keyword(4) ATLAS  
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1st Author's Name Daichi Koretomo  
1st Author's Affiliation Kochi Univercity of Technology (KUT)
2nd Author's Name Tatsuya Toda  
2nd Author's Affiliation Kochi Univercity of Technology (KUT)
3rd Author's Name Tokiyoshi Matsuda  
3rd Author's Affiliation Ryukoku University (Ryukoku Univ.)
4th Author's Name Mutsumi Kimura  
4th Author's Affiliation Ryukoku University (Ryukoku Univ.)
5th Author's Name Mamoru Furuta  
5th Author's Affiliation Kochi Univercity of Technology (KUT)
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Speaker Author-1 
Date Time 2016-04-09 10:50:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2016-14, OME2016-14 
Volume (vol) vol.116 
Number (no) no.1(SDM), no.2(OME) 
Page pp.57-60 
#Pages
Date of Issue 2016-04-01 (SDM, OME) 


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