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| Presentation | 2016-04-08 12:00 [Invited Talk] OFET Device Characteristics utilizing Low Work-function Metal Interface Control Layer Shun-ichiro Ohmi, Yasutaka Maeda, Syu Furuyama, Mizuha Hiroki (Tokyo Tech)  SDM2016-3 OME2016-3 Link to ES Tech. Rep. Archives: SDM2016-3 OME2016-3 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | High hole mobility, higher than that of a-Si, has been reported for the organic semiconductor field-effect transistor (OFET) utilizing pentacene, ruburene, and other materials. However, the electron mobility in those materials is significantly low compared to the hole mobility and device characteristics are not stable in the air. Therefore, the other materials such as fullerene is necessary to be introduced for the n-channel OFET to fabricate an organic CMOS. Furthermore, the device scaling and integration are the issues for the OFETs because of the difficulties to use lithography process. In this paper, we have investigated the effect of metal interface layer with low work-function, such as nitrogen-doped LaB6 which is stable in the air and Yb which is able to be evaporated, on the OFET device characteristics to realize the single organic semiconductor CMOS. Furthermore, fabrication of top-gate type OFET utilizing lithography process was also examined. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | pentacene / rubrene / nitrogen-doped LaB6 / Yb / lithography / top-gate type OFET / CMOS / | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 2, OME2016-3, pp. 11-15, April 2016. | |
| Paper # | OME2016-3 | |
| Date of Issue | 2016-04-01 (SDM, OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2016-3 OME2016-3 Link to ES Tech. Rep. Archives: SDM2016-3 OME2016-3 |
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| Conference Information | |
| Committee | SDM OME |
| Conference Date | 2016-04-08 - 2016-04-09 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawa Prefectural Museum & Art Museum |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Thin film devices, etc |
| Paper Information | |
| Registration To | OME |
| Conference Code | 2016-04-SDM-OME |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | OFET Device Characteristics utilizing Low Work-function Metal Interface Control Layer |
| Sub Title (in English) | |
| Keyword(1) | pentacene |
| Keyword(2) | rubrene |
| Keyword(3) | nitrogen-doped LaB6 |
| Keyword(4) | Yb |
| Keyword(5) | lithography |
| Keyword(6) | top-gate type OFET |
| Keyword(7) | CMOS |
| Keyword(8) | |
| 1st Author's Name | Shun-ichiro Ohmi |
| 1st Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 2nd Author's Name | Yasutaka Maeda |
| 2nd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 3rd Author's Name | Syu Furuyama |
| 3rd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 4th Author's Name | Mizuha Hiroki |
| 4th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
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| Speaker | Author-1 |
| Date Time | 2016-04-08 12:00:00 |
| Presentation Time | 40 minutes |
| Registration for | OME |
| Paper # | SDM2016-3, OME2016-3 |
| Volume (vol) | vol.116 |
| Number (no) | no.1(SDM), no.2(OME) |
| Page | pp.11-15 |
| #Pages | 5 |
| Date of Issue | 2016-04-01 (SDM, OME) |
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