Paper Abstract and Keywords |
Presentation |
2016-03-03 14:00
[Invited Talk]
A Recent Development in Thin-Film Device Applications using Oxide Semiconductors Toshihiko Maemoto, Yi Sun, Souhei Matsuda, Shota Sasaki, Kouhei Ashida, Oliver Kaltstein, Masatoshi Koyama, Kazuto Koike, Mitsuaki Yano, Shigehiko Sasa (Osaka Inst. Tech.) ED2015-121 SDM2015-128 Link to ES Tech. Rep. Archives: ED2015-121 SDM2015-128 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We report on the fabrication and characterization of flexible thin-film-transistors using a transparent zinc oxide (ZnO) semiconductor. Characterizations in bending experiments of flexible ZnO-TFTs and DC characteristics for fully transparent ZnO-TFTs were reported. The self-switching nano-diodes (SSD) were fabricated by using electron beam lithography and wet chemical etching at room temperature. ZnO-SSDs on glass substrate and a fully transparent ZnO-SSD were also characterized for transparent device applications. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Zinc oxide / Transparent / Flexible / Thin-film transistor / Self-switching nano-diode / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 469, ED2015-121, pp. 1-6, March 2016. |
Paper # |
ED2015-121 |
Date of Issue |
2016-02-25 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2015-121 SDM2015-128 Link to ES Tech. Rep. Archives: ED2015-121 SDM2015-128 |
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