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| Presentation | 2016-03-03 15:55 Growth and thermoelectric properties of compositionally homogeneous SiGe for nanowire thermopile infrared photodetector Hiroya Ikeda, Muthusamy Omprakash, Yasuhiro Hayakawa (Shizuoka Univ.)  ED2015-124 SDM2015-131 Link to ES Tech. Rep. Archives: ED2015-124 SDM2015-131 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | With the aim of realizing high-sensitivity thermopile infrared-photodetectors, we have investigated the enhancement of the thermoelectric performance by introducing SiGe nanowires. In the present study, we successfully produced compositionally homogeneous Si1－xGex polycrystals, which is required for fabrication of SiGe nanowires, using a temperature gradient growth method established by ourselves. In-situ x-ray penetration method was used for clarifying the detail growth mechanism, and Si transport due to solutal convection and crystalization position were made clear. In addition, we formed p- and n-type Si1－xGex by doping Ga and Sb, respectively. Their thermoelectric characteristics were also evaluated. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | IR photodetector / thermoelectrics / SiGe / Seebeck coefficient / figure of merit / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 470, SDM2015-131, pp. 19-22, March 2016. | |
| Paper # | SDM2015-131 | |
| Date of Issue | 2016-02-25 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2015-124 SDM2015-131 Link to ES Tech. Rep. Archives: ED2015-124 SDM2015-131 |
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| Conference Information | |
| Committee | ED SDM |
| Conference Date | 2016-03-03 - 2016-03-04 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Centennial Hall, Hokkaido Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Functional Nanodevices and Related Technologies |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2016-03-ED-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth and thermoelectric properties of compositionally homogeneous SiGe for nanowire thermopile infrared photodetector |
| Sub Title (in English) | |
| Keyword(1) | IR photodetector |
| Keyword(2) | thermoelectrics |
| Keyword(3) | SiGe |
| Keyword(4) | Seebeck coefficient |
| Keyword(5) | figure of merit |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Hiroya Ikeda |
| 1st Author's Affiliation | Shizuoka University (Shizuoka Univ.) |
| 2nd Author's Name | Muthusamy Omprakash |
| 2nd Author's Affiliation | Shizuoka University (Shizuoka Univ.) |
| 3rd Author's Name | Yasuhiro Hayakawa |
| 3rd Author's Affiliation | Shizuoka University (Shizuoka Univ.) |
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| Speaker | Author-1 |
| Date Time | 2016-03-03 15:55:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | ED2015-124, SDM2015-131 |
| Volume (vol) | vol.115 |
| Number (no) | no.469(ED), no.470(SDM) |
| Page | pp.19-22 |
| #Pages | 4 |
| Date of Issue | 2016-02-25 (ED, SDM) |
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