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Paper Abstract and Keywords
Presentation 2016-03-03 15:55
Growth and thermoelectric properties of compositionally homogeneous SiGe for nanowire thermopile infrared photodetector
Hiroya Ikeda, Muthusamy Omprakash, Yasuhiro Hayakawa (Shizuoka Univ.) ED2015-124 SDM2015-131 Link to ES Tech. Rep. Archives: ED2015-124 SDM2015-131
Abstract (in Japanese) (See Japanese page) 
(in English) With the aim of realizing high-sensitivity thermopile infrared-photodetectors, we have investigated the enhancement of the thermoelectric performance by introducing SiGe nanowires. In the present study, we successfully produced compositionally homogeneous Si1-xGex polycrystals, which is required for fabrication of SiGe nanowires, using a temperature gradient growth method established by ourselves. In-situ x-ray penetration method was used for clarifying the detail growth mechanism, and Si transport due to solutal convection and crystalization position were made clear. In addition, we formed p- and n-type Si1-xGex by doping Ga and Sb, respectively. Their thermoelectric characteristics were also evaluated.
Keyword (in Japanese) (See Japanese page) 
(in English) IR photodetector / thermoelectrics / SiGe / Seebeck coefficient / figure of merit / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 470, SDM2015-131, pp. 19-22, March 2016.
Paper # SDM2015-131 
Date of Issue 2016-02-25 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2015-124 SDM2015-131 Link to ES Tech. Rep. Archives: ED2015-124 SDM2015-131

Conference Information
Committee ED SDM  
Conference Date 2016-03-03 - 2016-03-04 
Place (in Japanese) (See Japanese page) 
Place (in English) Centennial Hall, Hokkaido Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional Nanodevices and Related Technologies 
Paper Information
Registration To SDM 
Conference Code 2016-03-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Growth and thermoelectric properties of compositionally homogeneous SiGe for nanowire thermopile infrared photodetector 
Sub Title (in English)  
Keyword(1) IR photodetector  
Keyword(2) thermoelectrics  
Keyword(3) SiGe  
Keyword(4) Seebeck coefficient  
Keyword(5) figure of merit  
1st Author's Name Hiroya Ikeda  
1st Author's Affiliation Shizuoka University (Shizuoka Univ.)
2nd Author's Name Muthusamy Omprakash  
2nd Author's Affiliation Shizuoka University (Shizuoka Univ.)
3rd Author's Name Yasuhiro Hayakawa  
3rd Author's Affiliation Shizuoka University (Shizuoka Univ.)
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Date Time 2016-03-03 15:55:00 
Presentation Time 25 
Registration for SDM 
Paper # IEICE-ED2015-124,IEICE-SDM2015-131 
Volume (vol) IEICE-115 
Number (no) no.469(ED), no.470(SDM) 
Page pp.19-22 
#Pages IEICE-4 
Date of Issue IEICE-ED-2016-02-25,IEICE-SDM-2016-02-25 

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