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Paper Abstract and Keywords
Presentation 2016-03-01 17:05
Low-power Standard Cell Memory using Silicon-on-Thin-BOX (SOTB) and Body-bias Control
Yusuke Yoshida, Masaru Kudo, Kimiyoshi Usami (SIT) VLD2015-130
Abstract (in Japanese) (See Japanese page) 
(in English) In recent years, energy harvesting and sensor node have attracted a lot of attention. Therefore, a memory which can reduce power consumption and realizes ultra-low voltage operation is required. However, it is especially difficult for the conventional SRAM to operate at ultra-low voltage. This paper describes a design of low-power and ultra-low voltage operation Standard Cell Memory (SCM) using Silicon-on-Thin-BOX (SOTB). SOTB is one of the FD-SOI devices. We investigated the memory which can operate low-power consumption and ultra-low voltage operation by performing a body bias control.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon-on-Thin-BOX / Body Bias / Standard Cell Memory / / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 465, VLD2015-130, pp. 111-116, Feb. 2016.
Paper # VLD2015-130 
Date of Issue 2016-02-22 (VLD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF VLD2015-130

Conference Information
Committee VLD  
Conference Date 2016-02-29 - 2016-03-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa Seinen Kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To VLD 
Conference Code 2016-02-VLD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Low-power Standard Cell Memory using Silicon-on-Thin-BOX (SOTB) and Body-bias Control 
Sub Title (in English)  
Keyword(1) Silicon-on-Thin-BOX  
Keyword(2) Body Bias  
Keyword(3) Standard Cell Memory  
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1st Author's Name Yusuke Yoshida  
1st Author's Affiliation Shibaura Institute of Technology (SIT)
2nd Author's Name Masaru Kudo  
2nd Author's Affiliation Shibaura Institute of Technology (SIT)
3rd Author's Name Kimiyoshi Usami  
3rd Author's Affiliation Shibaura Institute of Technology (SIT)
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Speaker
Date Time 2016-03-01 17:05:00 
Presentation Time 25 
Registration for VLD 
Paper # IEICE-VLD2015-130 
Volume (vol) IEICE-115 
Number (no) no.465 
Page pp.111-116 
#Pages IEICE-6 
Date of Issue IEICE-VLD-2016-02-22 


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