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| Presentation | 2016-02-19 09:00 High-performance Ge-on-Si Near-infrared Photodiodes Yasuhiko Ishikawa, Yuji Miyasaka, Kazuki Ito, Sho Nagatomo, Kazumi Wada (Univ. Tokyo)  OCS2015-107 OFT2015-62 OPE2015-227 Link to ES Tech. Rep. Archives: OPE2015-227 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Near-infrared photodiodes for Si photonics are fabricated using Ge epitaxial layers on Si grown by ultrahigh-vacuum chemical vapor deposition. Current-voltage characteristics and spectral responsivity are reported. Growth processes are discussed to realize higher-performance photodiodes. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Si Photonics / Germanium / Epitaxial Growth / Near-infrared Photodetectors / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 453, OPE2015-227, pp. 65-68, Feb. 2016. | |
| Paper # | OPE2015-227 | |
| Date of Issue | 2016-02-11 (OCS, OFT, OPE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | OCS2015-107 OFT2015-62 OPE2015-227 Link to ES Tech. Rep. Archives: OPE2015-227 |
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| Conference Information | |
| Committee | OFT OCS OPE |
| Conference Date | 2016-02-18 - 2016-02-19 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawa Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | OPE |
| Conference Code | 2016-02-OFT-OCS-OPE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-performance Ge-on-Si Near-infrared Photodiodes |
| Sub Title (in English) | |
| Keyword(1) | Si Photonics |
| Keyword(2) | Germanium |
| Keyword(3) | Epitaxial Growth |
| Keyword(4) | Near-infrared Photodetectors |
| Keyword(5) | |
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| Keyword(8) | |
| 1st Author's Name | Yasuhiko Ishikawa |
| 1st Author's Affiliation | The University of Tokyo (Univ. Tokyo) |
| 2nd Author's Name | Yuji Miyasaka |
| 2nd Author's Affiliation | The University of Tokyo (Univ. Tokyo) |
| 3rd Author's Name | Kazuki Ito |
| 3rd Author's Affiliation | The University of Tokyo (Univ. Tokyo) |
| 4th Author's Name | Sho Nagatomo |
| 4th Author's Affiliation | The University of Tokyo (Univ. Tokyo) |
| 5th Author's Name | Kazumi Wada |
| 5th Author's Affiliation | The University of Tokyo (Univ. Tokyo) |
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| Speaker | Author-1 |
| Date Time | 2016-02-19 09:00:00 |
| Presentation Time | 25 minutes |
| Registration for | OPE |
| Paper # | OCS2015-107, OFT2015-62, OPE2015-227 |
| Volume (vol) | vol.115 |
| Number (no) | no.451(OCS), no.452(OFT), no.453(OPE) |
| Page | pp.39-42(OCS), pp.39-42(OFT), pp.65-68(OPE) |
| #Pages | 4 |
| Date of Issue | 2016-02-11 (OCS, OFT, OPE) |
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