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Paper Abstract and Keywords
Presentation 2016-01-28 15:50
[Invited Talk] Super Steep Subthreshold Slope PN-Body Tied SOI FET with Ultra Low Drain Voltage
Jiro Ida (Kanazawa Institute of Technology) SDM2015-127 Link to ES Tech. Rep. Archives: SDM2015-127
Abstract (in Japanese) (See Japanese page) 
(in English) We have proposed the new type super steep subthreshold slope (SS) device of the PN-body tied SOI FET. The N region is inserted on the body tied region of the SOI FET. The hole are intended to inject to the body of the SOI by the PNP bipolar transistor, which start the floating body effect and result in the appearance of the super steep SS. It was confirmed that the super steep SS appears at the ultralow drain voltage of 0.1V at 3 decades of the drain current. It was also confirmed that the device has the good Id-Vd characteristics and the negligible hysteresis characteristics.
Keyword (in Japanese) (See Japanese page) 
(in English) Steep subthreshold slope / SOI FET / Floating Body Effect / / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 440, SDM2015-127, pp. 31-34, Jan. 2016.
Paper # SDM2015-127 
Date of Issue 2016-01-21 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2015-127 Link to ES Tech. Rep. Archives: SDM2015-127

Conference Information
Committee SDM  
Conference Date 2016-01-28 - 2016-01-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2016-01-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Super Steep Subthreshold Slope PN-Body Tied SOI FET with Ultra Low Drain Voltage 
Sub Title (in English)  
Keyword(1) Steep subthreshold slope  
Keyword(2) SOI FET  
Keyword(3) Floating Body Effect  
1st Author's Name Jiro Ida  
1st Author's Affiliation Kanazawa Institute of Technology (Kanazawa Institute of Technology)
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Date Time 2016-01-28 15:50:00 
Presentation Time 30 
Registration for SDM 
Paper # IEICE-SDM2015-127 
Volume (vol) IEICE-115 
Number (no) no.440 
Page pp.31-34 
#Pages IEICE-4 
Date of Issue IEICE-SDM-2016-01-21 

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