IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
... (for ESS/CS/ES/ISS)
Tech. Rep. Archives
... (for ES/CS)
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2016-01-28 10:55
Characterization of 1.3-μm npn-AlGaInAs/InP Transistor Laser with Buried Heterostructure
Shotaro Tadano, Takaaki Kaneko, Kentaro Yamanaka, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Tech) Link to ES Tech. Rep. Archives: EMT2015-89 OPE2015-151 LQE2015-138 EST2015-95 MWP2015-64
Abstract (in Japanese) (See Japanese page) 
(in English) Since a long-wavelength transistor lasers(TL)has 3 electrical terminals, which are different from the conventional LDs, it allows to operate with several terminal configurations. In this paper, we observed output power control by the collector-base voltage VCB with common base configuration and suppression of the collector current increasing due to stimulated emission after the threshold current. We also obtained current gain β improvement by thinning the p-GaInAsP base layer thanks to suppression of carrier recombination in the p-GaInAsP base layer.
Keyword (in Japanese) (See Japanese page) 
(in English) semiconductor laser / high speed / buried heterostructure / transistor laser / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 433, LQE2015-138, pp. 21-26, Jan. 2016.
Paper # LQE2015-138 
Date of Issue 2016-01-21 (PN, EMT, OPE, LQE, EST, MWP) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Conference Information
Conference Date 2016-01-28 - 2016-01-29 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2016-01-LQE-EST-OPE-EMT-PN-MWP-EMT-PEM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization of 1.3-μm npn-AlGaInAs/InP Transistor Laser with Buried Heterostructure 
Sub Title (in English)  
Keyword(1) semiconductor laser  
Keyword(2) high speed  
Keyword(3) buried heterostructure  
Keyword(4) transistor laser  
1st Author's Name Shotaro Tadano  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
2nd Author's Name Takaaki Kaneko  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
3rd Author's Name Kentaro Yamanaka  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
4th Author's Name Nobuhiko Nishiyama  
4th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
5th Author's Name Shigehisa Arai  
5th Author's Affiliation QNERC, Tokyo Institute of Technology (Tokyo Tech)
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Date Time 2016-01-28 10:55:00 
Presentation Time 25 
Registration for LQE 
Paper # IEICE-PN2015-38,IEICE-EMT2015-89,IEICE-OPE2015-151,IEICE-LQE2015-138,IEICE-EST2015-95,IEICE-MWP2015-64 
Volume (vol) IEICE-115 
Number (no) no.430(PN), no.431(EMT), no.432(OPE), no.433(LQE), no.434(EST), no.435(MWP) 
Page pp.21-26 
#Pages IEICE-6 
Date of Issue IEICE-PN-2016-01-21,IEICE-EMT-2016-01-21,IEICE-OPE-2016-01-21,IEICE-LQE-2016-01-21,IEICE-EST-2016-01-21,IEICE-MWP-2016-01-21 

[Return to Top Page]

[Return to IEICE Web Page]

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan