Paper Abstract and Keywords |
Presentation |
2016-01-28 14:00
[Invited Talk]
CMOS photonics technologies based on heterogeneous integration on Si Mitsuru Takenaka, Younghyun Kim, Jaehoon Han, Jian Kan, Yuki Ikku, Yongpeng Cheng, Jinkwon Park, SangHyeon Kim, Shinichi Takagi (Univ. of Tokyo) SDM2015-124 Link to ES Tech. Rep. Archives: SDM2015-124 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this paper, we present heterogeneous integration of SiGe/Ge and III-V semiconductors on Si for electronic-photonic integrated circuits through CMOS photonics technologies. As for SiGe CMOS photonics, strained SiGe is shown to enhance modulation efficiency for optical modulators. We demonstrated that the plasma dispersion effect is enhanced by strain application to SiGe owing to a decrease in the effective hole mass. As for Ge CMOS photonics, Ge-based photonic-wire waveguides are demonstrated for Mid-IR applications by using photonic Ge-on-Insulator wafers for the first time. As for III-V CMOS photonics, we developed high-quality photonic III-V on Insulator wafers by using direct wafer bonding. InGaAsP photonic-wire devices including optical switches and InGaAs photodetectors are demonstrated. We have also successfully demonstrated wafer-size-scalable III-V-OI wafers by using a III-V epi on Si wafer. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Si photonics / SiGe / Ge / III-V semiconductors / electronic-photonic integrated circuits / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 440, SDM2015-124, pp. 17-20, Jan. 2016. |
Paper # |
SDM2015-124 |
Date of Issue |
2016-01-21 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2015-124 Link to ES Tech. Rep. Archives: SDM2015-124 |
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