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Paper Abstract and Keywords
Presentation 2016-01-28 10:30
[Invited Talk] Carrier Transport Analysis of High-Performance Poly-Si Nanowire Transistor Fabricated by Advanced SPC with Record-High Electron Mobility
Minoru Oda, Kiwamu Sakuma, Yuuichi Kamimuta, Masumi Saitoh (Toshiba Corp.) SDM2015-121 Link to ES Tech. Rep. Archives: SDM2015-121
Abstract (in Japanese) (See Japanese page) 
(in English) High-performance poly-Si nanowire transistors were fabricated by Advanced SPC process, in which the process of forming a poly-Si film is optimized. Temperature and surface carrier density (Ns) dependence of mobility, and also correlation between grain size and mobility are investigated in order to determine what limits the mobility in the poly-Si channel. As a result, it is suggested that the hole mobility is dominated by phonon scattering, and that the electron mobility is dominated by surface roughness scattering at high Ns and coulomb scattering at low Ns which is attributed to defects in grains although scattering at grain boundaries has been thought to be dominant in the poly-Si transistors.
Keyword (in Japanese) (See Japanese page) 
(in English) poly-Si / TFT / mobility / SPC / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 440, SDM2015-121, pp. 5-8, Jan. 2016.
Paper # SDM2015-121 
Date of Issue 2016-01-21 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2015-121 Link to ES Tech. Rep. Archives: SDM2015-121

Conference Information
Committee SDM  
Conference Date 2016-01-28 - 2016-01-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2016-01-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Carrier Transport Analysis of High-Performance Poly-Si Nanowire Transistor Fabricated by Advanced SPC with Record-High Electron Mobility 
Sub Title (in English)  
Keyword(1) poly-Si  
Keyword(2) TFT  
Keyword(3) mobility  
Keyword(4) SPC  
1st Author's Name Minoru Oda  
1st Author's Affiliation Toshiba Corporation (Toshiba Corp.)
2nd Author's Name Kiwamu Sakuma  
2nd Author's Affiliation Toshiba Corporation (Toshiba Corp.)
3rd Author's Name Yuuichi Kamimuta  
3rd Author's Affiliation Toshiba Corporation (Toshiba Corp.)
4th Author's Name Masumi Saitoh  
4th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
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Date Time 2016-01-28 10:30:00 
Presentation Time 30 
Registration for SDM 
Paper # IEICE-SDM2015-121 
Volume (vol) IEICE-115 
Number (no) no.440 
Page pp.5-8 
#Pages IEICE-4 
Date of Issue IEICE-SDM-2016-01-21 

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