Paper Abstract and Keywords |
Presentation |
2016-01-20 15:30
Analysis of Millimeter Wave Oscillation in GaN HEMT Unit Cell Shinsuke Watanabe, Shouhei Imai, Eigo Kuwata, Hidetoshi Koyama, Yoshitaka Kamo, Yoshitsugu Yamamoto (Mitsubishi Electric) ED2015-119 Link to ES Tech. Rep. Archives: ED2015-119 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A millimeter wave oscillation was observed in GaN HEMT unit cell. To prevent this oscillation, we performed electromagnetic field analysis for HEMT. Calculated resonant frequency corresponded to measured oscillation frequency. Estimated electromagnetic field of resonant state distributes anti-symmetrically with respect to a center finger, and this result of our analysis clearly shows that the millimeter wave oscillation results from odd mode oscillation in the unit cell. Additionally, this analysis suggested that connection of edges of each source electrodes prevents the odd mode resonance. We fabricated HEMT TEG with connected edges of source electrodes, and the oscillation was successfully prevented maintaining the performance. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / HEMT / Oscillation / Electromagnetic field analysis / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 402, ED2015-119, pp. 43-48, Jan. 2016. |
Paper # |
ED2015-119 |
Date of Issue |
2016-01-13 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2015-119 Link to ES Tech. Rep. Archives: ED2015-119 |
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