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| Presentation | 2016-01-20 10:55 [Invited Lecture] Low On-resistance SiC-MOSFET with Blocking Voltage of 3.3kV and Realization of the World's First All-SiC Traction Inverter Kenji Hamada, Shiro Hino, Naruhisa Miura, Hiroshi Watanabe, Shuhei Nakata, Eisuke Suekawa, Yuji Ebiike, Masayuki Imaizumi, Isao Umezaki, Satoshi Yamakawa (Mitsubishi Electric)  ED2015-113 Link to ES Tech. Rep. Archives: ED2015-113 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | For the further efficiency improvement of existing power modules for railcar traction, we have developed MOSFETs with a rated voltage of 3.3 kV by using SiC, which are expected as next-generation power semiconductor materials. The specific on-resistance of the MOSFET was reduced considerably with an original technique, which formed n-type doping layer into JFET region of the MOSFET. The world’s first all-SiC traction inverter utilizing this technique has been produced, and it have been verified to achieve an approximate 40% savings in power consumption compared to conventional systems. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | 3.3kV / 4H-SiC / MOSFET / inverter / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 402, ED2015-113, pp. 7-12, Jan. 2016. | |
| Paper # | ED2015-113 | |
| Date of Issue | 2016-01-13 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2015-113 Link to ES Tech. Rep. Archives: ED2015-113 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2016-01-20 - 2016-01-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Power Devices and High-frequency Devices, Microwave, etc. |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2016-01-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low On-resistance SiC-MOSFET with Blocking Voltage of 3.3kV and Realization of the World's First All-SiC Traction Inverter |
| Sub Title (in English) | |
| Keyword(1) | 3.3kV |
| Keyword(2) | 4H-SiC |
| Keyword(3) | MOSFET |
| Keyword(4) | inverter |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kenji Hamada |
| 1st Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 2nd Author's Name | Shiro Hino |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 3rd Author's Name | Naruhisa Miura |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 4th Author's Name | Hiroshi Watanabe |
| 4th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 5th Author's Name | Shuhei Nakata |
| 5th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 6th Author's Name | Eisuke Suekawa |
| 6th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 7th Author's Name | Yuji Ebiike |
| 7th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 8th Author's Name | Masayuki Imaizumi |
| 8th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 9th Author's Name | Isao Umezaki |
| 9th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 10th Author's Name | Satoshi Yamakawa |
| 10th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
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| Speaker | Author-1 |
| Date Time | 2016-01-20 10:55:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2015-113 |
| Volume (vol) | vol.115 |
| Number (no) | no.402 |
| Page | pp.7-12 |
| #Pages | 6 |
| Date of Issue | 2016-01-13 (ED) |
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