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| Presentation | 2015-12-22 11:35 Evaluation of GaN by using Laser-induced THz emission Yuji Sakai, Iwao Kawayama (Osaka Univ.), Hidetoshi Nakanishi (SCREEN), Masayoshi Tonouchi (Osaka Univ.)  ED2015-106 Link to ES Tech. Rep. Archives: ED2015-106 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Wide-gap semiconductors have received significant attention for their advantages over existing semiconductors. Here, We report studies on laser-induced terahertz (THz) emission from GaN. We found that the THz emission is enhanced by defects related to yellow luminescence, and this phenomenon is explained through the modification of band structures in the surface depletion layer owing to trapped electrons at defect sites. Our results demonstrate that the surface potential in a GaN surface could be detected by laser-induced THz emission. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Terahertz / GaN / Surface Potential / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 387, ED2015-106, pp. 89-92, Dec. 2015. | |
| Paper # | ED2015-106 | |
| Date of Issue | 2015-12-14 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2015-106 Link to ES Tech. Rep. Archives: ED2015-106 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2015-12-21 - 2015-12-22 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | RIEC, Tohoku Univ |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Millimeter-wave, terahertz-wave devices and systems |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2015-12-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of GaN by using Laser-induced THz emission |
| Sub Title (in English) | |
| Keyword(1) | Terahertz |
| Keyword(2) | GaN |
| Keyword(3) | Surface Potential |
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| 1st Author's Name | Yuji Sakai |
| 1st Author's Affiliation | Osaka University (Osaka Univ.) |
| 2nd Author's Name | Iwao Kawayama |
| 2nd Author's Affiliation | Osaka University (Osaka Univ.) |
| 3rd Author's Name | Hidetoshi Nakanishi |
| 3rd Author's Affiliation | SCREEN Holdings (SCREEN) |
| 4th Author's Name | Masayoshi Tonouchi |
| 4th Author's Affiliation | Osaka University (Osaka Univ.) |
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| Speaker | Author-1 |
| Date Time | 2015-12-22 11:35:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2015-106 |
| Volume (vol) | vol.115 |
| Number (no) | no.387 |
| Page | pp.89-92 |
| #Pages | 4 |
| Date of Issue | 2015-12-14 (ED) |
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