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Paper Abstract and Keywords
Presentation 2015-12-21 16:30
Liquid phase growth of impurity-doped GaSe crystals for the high efficiency THz wave generation by high resistivity
Kouhei Suzuki, Yohei Sato, Kensaku Maeda, Yutaka Oyama (Tohoku Univ.) ED2015-98 Link to ES Tech. Rep. Archives: ED2015-98
Abstract (in Japanese) (See Japanese page) 
(in English) We grow layered semiconductor GaSe crystals by liquid phase epitaxy TDM-CVP for the difference frequency generation of THz wave. GaSe crystals have the wide transparency (λ = 0.6~20 μm), the large nonlinear optical coefficient (d22 = 54 pm/V @10.6 μm), and the high birefringence (no=2.9082, ne=2.5676 @1.06μm). For these superior properties, these crystals can generate high efficiency THz wave via difference frequency generation under collinear phase matching. In this study, Transition metal-doped or amphoteric impurity-doped GaSe crystals for the purpose of preventing free carrier absorption were grown by the same growth method. These crystals were evaluated by in comparison with the not-intentionally-doped GaSe crystals.
Keyword (in Japanese) (See Japanese page) 
(in English) GaSe / Impurity doping / Nonlinear optical effect / / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 387, ED2015-98, pp. 41-46, Dec. 2015.
Paper # ED2015-98 
Date of Issue 2015-12-14 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2015-98 Link to ES Tech. Rep. Archives: ED2015-98

Conference Information
Committee ED  
Conference Date 2015-12-21 - 2015-12-22 
Place (in Japanese) (See Japanese page) 
Place (in English) RIEC, Tohoku Univ 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Millimeter-wave, terahertz-wave devices and systems 
Paper Information
Registration To ED 
Conference Code 2015-12-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Liquid phase growth of impurity-doped GaSe crystals for the high efficiency THz wave generation by high resistivity 
Sub Title (in English)  
Keyword(1) GaSe  
Keyword(2) Impurity doping  
Keyword(3) Nonlinear optical effect  
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1st Author's Name Kouhei Suzuki  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Yohei Sato  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Kensaku Maeda  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Yutaka Oyama  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2015-12-21 16:30:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2015-98 
Volume (vol) vol.115 
Number (no) no.387 
Page pp.41-46 
#Pages
Date of Issue 2015-12-14 (ED) 


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