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Paper Abstract and Keywords
Presentation 2015-12-21 15:00
Extraction of intrinsic parameters in graphene-channel FET
Gen Tamamushi, Kenta Sugawara, Akira Sato, Keiichiro Tashima, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2015-95 Link to ES Tech. Rep. Archives: ED2015-95
Abstract (in Japanese) (See Japanese page) 
(in English) We fabricate and characterize the graphene-channel FETs (G-FETs) made of high-quality epitaxial graphene (EG) grown by thermal decomposition of a semi-insulating 4H-SiC(0001 ̅) substrate. To resolve the problems of a conventional method for extracting the intrinsic G-FET parameters, we develop a new model accounting for the tunneling and thermionic-emission resistances at n-i and n-p junctions in the G-FET channel. We then extract the intrinsic parameters by curve-fitting the measured current-voltage transfer characteristics.
Keyword (in Japanese) (See Japanese page) 
(in English) Graphene / FET / tunneling resistance / thermionic-emission resistance / fitting / mobility / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 387, ED2015-95, pp. 25-30, Dec. 2015.
Paper # ED2015-95 
Date of Issue 2015-12-14 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2015-95 Link to ES Tech. Rep. Archives: ED2015-95

Conference Information
Committee ED  
Conference Date 2015-12-21 - 2015-12-22 
Place (in Japanese) (See Japanese page) 
Place (in English) RIEC, Tohoku Univ 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Millimeter-wave, terahertz-wave devices and systems 
Paper Information
Registration To ED 
Conference Code 2015-12-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Extraction of intrinsic parameters in graphene-channel FET 
Sub Title (in English)  
Keyword(1) Graphene  
Keyword(2) FET  
Keyword(3) tunneling resistance  
Keyword(4) thermionic-emission resistance  
Keyword(5) fitting  
Keyword(6) mobility  
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Keyword(8)  
1st Author's Name Gen Tamamushi  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Kenta Sugawara  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Akira Sato  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Keiichiro Tashima  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Hirokazu Fukidome  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Maki Suemitsu  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
7th Author's Name Taiichi Otsuji  
7th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2015-12-21 15:00:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2015-95 
Volume (vol) vol.115 
Number (no) no.387 
Page pp.25-30 
#Pages
Date of Issue 2015-12-14 (ED) 


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