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Paper Abstract and Keywords
Presentation 2015-12-14 11:00
Fabrication of FinFET Structure with High Selectivity Etching Using Newly Developed SiNx Etch Gas
Takashi Kojiri (Tohoku Univ./ZEON), Tomoyuki Suwa, Keiichi Hashimoto, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.) EID2015-9 SDM2015-92 Link to ES Tech. Rep. Archives: EID2015-9 SDM2015-92
Abstract (in Japanese) (See Japanese page) 
(in English) We evaluated the properties of newly developed SiNx etch gas (SSY525). The gas indicated high selectivity as 30 ~ 60 for Poly-Si, and over 100 for SiO2, respectively. We introduced SSY525 to fabricate the FinFET which is the typical structure of Three Dimensional Metal Oxide Semiconductor Field Effect Transistors (3D-MOSFETs) and requires the high selectivity etching for the fabrication process. The 3D structure of FinFET fabricated by the etching process with SSY525 is superior to that with the CH3F gas which is conventionally used for the SiNx etching.
Keyword (in Japanese) (See Japanese page) 
(in English) FinFET / Spacer Etch / Etching Gas / / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 362, EID2015-9, pp. 1-4, Dec. 2015.
Paper # EID2015-9 
Date of Issue 2015-12-07 (EID, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2015-9 SDM2015-92 Link to ES Tech. Rep. Archives: EID2015-9 SDM2015-92

Conference Information
Committee EID SDM  
Conference Date 2015-12-14 - 2015-12-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Ryukoku University, Avanti Kyoto Hall 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Si and Si-related Materials and Devices, and Display Technology 
Paper Information
Registration To EID 
Conference Code 2015-12-EID-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of FinFET Structure with High Selectivity Etching Using Newly Developed SiNx Etch Gas 
Sub Title (in English)  
Keyword(1) FinFET  
Keyword(2) Spacer Etch  
Keyword(3) Etching Gas  
1st Author's Name Takashi Kojiri  
1st Author's Affiliation Tohoku University/ZEON Corporation (Tohoku Univ./ZEON)
2nd Author's Name Tomoyuki Suwa  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Keiichi Hashimoto  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Akinobu Teramoto  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Rihito Kuroda  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Shigetoshi Sugawa  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
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Date Time 2015-12-14 11:00:00 
Presentation Time 15 
Registration for EID 
Paper # IEICE-EID2015-9,IEICE-SDM2015-92 
Volume (vol) IEICE-115 
Number (no) no.362(EID), no.363(SDM) 
Page pp.1-4 
#Pages IEICE-4 
Date of Issue IEICE-EID-2015-12-07,IEICE-SDM-2015-12-07 

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