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Paper Abstract and Keywords
Presentation 2015-12-14 13:45
Evaluation of In2O3 film deposited by RF magnetron sputtering
Toshihiro Yoshioka, Junji Ogawa, Masahiro Yuge, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2015-15 SDM2015-98 Link to ES Tech. Rep. Archives: EID2015-15 SDM2015-98
Abstract (in Japanese) (See Japanese page) 
(in English) Oxide semiconductors have attracted much attention as a promising alternative to hydrogenated amorphous Si (a-Si:H) and poly-Si due to their high field effect mobility even in the amorphous state with high optical transmittance in the visible range. In this study, among the components contained in the InGaZnO4 (IGZO), In2O3 was deposited and evaluated for the possible cause of high field effect mobility. Optical transmittance and sheet resistance of In2O3 thin film were evaluated and applied for thin film transistor.
Keyword (in Japanese) (See Japanese page) 
(in English) RF magnetron sputtering / Oxide semiconductor / InGaZnO4 (IGZO) / / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 362, EID2015-15, pp. 27-30, Dec. 2015.
Paper # EID2015-15 
Date of Issue 2015-12-07 (EID, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2015-15 SDM2015-98 Link to ES Tech. Rep. Archives: EID2015-15 SDM2015-98

Conference Information
Committee EID SDM  
Conference Date 2015-12-14 - 2015-12-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Ryukoku University, Avanti Kyoto Hall 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Si and Si-related Materials and Devices, and Display Technology 
Paper Information
Registration To EID 
Conference Code 2015-12-EID-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluation of In2O3 film deposited by RF magnetron sputtering 
Sub Title (in English)  
Keyword(1) RF magnetron sputtering  
Keyword(2) Oxide semiconductor  
Keyword(3) InGaZnO4 (IGZO)  
1st Author's Name Toshihiro Yoshioka  
1st Author's Affiliation Ryukoku University (Ryukoku Univ.)
2nd Author's Name Junji Ogawa  
2nd Author's Affiliation Ryukoku University (Ryukoku Univ.)
3rd Author's Name Masahiro Yuge  
3rd Author's Affiliation Ryukoku University (Ryukoku Univ.)
4th Author's Name Tokiyoshi Matsuda  
4th Author's Affiliation Ryukoku University (Ryukoku Univ.)
5th Author's Name Mutsumi Kimura  
5th Author's Affiliation Ryukoku University (Ryukoku Univ.)
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Date Time 2015-12-14 13:45:00 
Presentation Time 15 
Registration for EID 
Paper # IEICE-EID2015-15,IEICE-SDM2015-98 
Volume (vol) IEICE-115 
Number (no) no.362(EID), no.363(SDM) 
Page pp.27-30 
#Pages IEICE-4 
Date of Issue IEICE-EID-2015-12-07,IEICE-SDM-2015-12-07 

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