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Paper Abstract and Keywords
Presentation 2015-11-27 10:25
Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
P.Pungboon Pansila, Kensaku Kanomata, Bashir Ahammad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ) ED2015-81 CPM2015-116 LQE2015-113 Link to ES Tech. Rep. Archives: ED2015-81 CPM2015-116 LQE2015-113
Abstract (in Japanese) (See Japanese page) 
(in English) Temperature-controlled ALD of GaN on Si(100) is demonstrated with TMG and plasma-excited NH3. The TMG adsorption and its reaction with NH3 plasma are investigated by IR abosption spectroscopy and X-ray photoelectron spectroscopy. It is found that the TMG saturation has the highest adsorption density at RT and the plasma-excited NH3 is effective in nitriding adsorbed TMG at 115 °C. The temperature-controlled ALD for GaN films is performed using TMG adsorption at RT and the plasma-excited NH3 treatment at the substrate temperature of 115 °C. The deposition rate of 0.045 nm /cycle is obtained in the present method.
Keyword (in Japanese) (See Japanese page) 
(in English) Gallium nitride / TMG / ammonia plasma / temperature-controlled ALD / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 329, ED2015-81, pp. 69-72, Nov. 2015.
Paper # ED2015-81 
Date of Issue 2015-11-19 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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Download PDF ED2015-81 CPM2015-116 LQE2015-113 Link to ES Tech. Rep. Archives: ED2015-81 CPM2015-116 LQE2015-113

Conference Information
Committee ED LQE CPM  
Conference Date 2015-11-26 - 2015-11-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Osaka City University Media Center 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies 
Paper Information
Registration To ED 
Conference Code 2015-11-ED-LQE-CPM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source 
Sub Title (in English)  
Keyword(1) Gallium nitride  
Keyword(2) TMG  
Keyword(3) ammonia plasma  
Keyword(4) temperature-controlled ALD  
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1st Author's Name P.Pungboon Pansila  
1st Author's Affiliation Yamagata Univ (Yamagata Univ)
2nd Author's Name Kensaku Kanomata  
2nd Author's Affiliation Yamagata Univ (Yamagata Univ)
3rd Author's Name Bashir Ahammad  
3rd Author's Affiliation Yamagata Univ (Yamagata Univ)
4th Author's Name Shigeru Kubota  
4th Author's Affiliation Yamagata Univ (Yamagata Univ)
5th Author's Name Fumihiko Hirose  
5th Author's Affiliation Yamagata Univ (Yamagata Univ)
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Speaker
Date Time 2015-11-27 10:25:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2015-81,IEICE-CPM2015-116,IEICE-LQE2015-113 
Volume (vol) IEICE-115 
Number (no) no.329(ED), no.330(CPM), no.331(LQE) 
Page pp.69-72 
#Pages IEICE-4 
Date of Issue IEICE-ED-2015-11-19,IEICE-CPM-2015-11-19,IEICE-LQE-2015-11-19 


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