Paper Abstract and Keywords |
Presentation |
2015-11-27 10:25
Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source P.Pungboon Pansila, Kensaku Kanomata, Bashir Ahammad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ) ED2015-81 CPM2015-116 LQE2015-113 Link to ES Tech. Rep. Archives: ED2015-81 CPM2015-116 LQE2015-113 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Temperature-controlled ALD of GaN on Si(100) is demonstrated with TMG and plasma-excited NH3. The TMG adsorption and its reaction with NH3 plasma are investigated by IR abosption spectroscopy and X-ray photoelectron spectroscopy. It is found that the TMG saturation has the highest adsorption density at RT and the plasma-excited NH3 is effective in nitriding adsorbed TMG at 115 °C. The temperature-controlled ALD for GaN films is performed using TMG adsorption at RT and the plasma-excited NH3 treatment at the substrate temperature of 115 °C. The deposition rate of 0.045 nm /cycle is obtained in the present method. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Gallium nitride / TMG / ammonia plasma / temperature-controlled ALD / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 329, ED2015-81, pp. 69-72, Nov. 2015. |
Paper # |
ED2015-81 |
Date of Issue |
2015-11-19 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2015-81 CPM2015-116 LQE2015-113 Link to ES Tech. Rep. Archives: ED2015-81 CPM2015-116 LQE2015-113 |
Conference Information |
Committee |
ED LQE CPM |
Conference Date |
2015-11-26 - 2015-11-27 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Osaka City University Media Center |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride Semiconductor Devices, Materials, Related Technologies |
Paper Information |
Registration To |
ED |
Conference Code |
2015-11-ED-LQE-CPM |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source |
Sub Title (in English) |
|
Keyword(1) |
Gallium nitride |
Keyword(2) |
TMG |
Keyword(3) |
ammonia plasma |
Keyword(4) |
temperature-controlled ALD |
Keyword(5) |
|
Keyword(6) |
|
Keyword(7) |
|
Keyword(8) |
|
1st Author's Name |
P.Pungboon Pansila |
1st Author's Affiliation |
Yamagata Univ (Yamagata Univ) |
2nd Author's Name |
Kensaku Kanomata |
2nd Author's Affiliation |
Yamagata Univ (Yamagata Univ) |
3rd Author's Name |
Bashir Ahammad |
3rd Author's Affiliation |
Yamagata Univ (Yamagata Univ) |
4th Author's Name |
Shigeru Kubota |
4th Author's Affiliation |
Yamagata Univ (Yamagata Univ) |
5th Author's Name |
Fumihiko Hirose |
5th Author's Affiliation |
Yamagata Univ (Yamagata Univ) |
6th Author's Name |
|
6th Author's Affiliation |
() |
7th Author's Name |
|
7th Author's Affiliation |
() |
8th Author's Name |
|
8th Author's Affiliation |
() |
9th Author's Name |
|
9th Author's Affiliation |
() |
10th Author's Name |
|
10th Author's Affiliation |
() |
11th Author's Name |
|
11th Author's Affiliation |
() |
12th Author's Name |
|
12th Author's Affiliation |
() |
13th Author's Name |
|
13th Author's Affiliation |
() |
14th Author's Name |
|
14th Author's Affiliation |
() |
15th Author's Name |
|
15th Author's Affiliation |
() |
16th Author's Name |
|
16th Author's Affiliation |
() |
17th Author's Name |
|
17th Author's Affiliation |
() |
18th Author's Name |
|
18th Author's Affiliation |
() |
19th Author's Name |
|
19th Author's Affiliation |
() |
20th Author's Name |
|
20th Author's Affiliation |
() |
Speaker |
Author-1 |
Date Time |
2015-11-27 10:25:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2015-81, CPM2015-116, LQE2015-113 |
Volume (vol) |
vol.115 |
Number (no) |
no.329(ED), no.330(CPM), no.331(LQE) |
Page |
pp.69-72 |
#Pages |
4 |
Date of Issue |
2015-11-19 (ED, CPM, LQE) |
|