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| Presentation | 2015-11-26 11:20 AlN growth on AlN/Sapphire substrate by RF-HVPE Daiki Yasui, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Motoaki Iwaya, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.)  ED2015-70 CPM2015-105 LQE2015-102 Link to ES Tech. Rep. Archives: ED2015-70 CPM2015-105 LQE2015-102 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | AlN (Aluminum nitride) is promising for deep ultraviolet optoelectronic devices. High crystal quality free-standing AlN substrates are obtained in recent year by PVT (physical vapor transport). Nevertheless, it is difficult to fabricate low cost of AlN substrates with large diameter by PVT. Large diameter with reasonable price for commercial of AlN templates can achieve by using sapphire substrates. However, high density of threading dislocations exists in AlN templates and will lower the performance of devices. In this research, we focus on sputtering growth method, which can easily fabricate AlN films on sapphire substrate as templates, and high crystal quality of AlN films are obtained to grow AlN on sputtering AlN templates by HVPE (hydride vapor phase epitaxy). | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | HVPE / AlN / AlN/Sapphire / Sputtering / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 331, LQE2015-102, pp. 11-14, Nov. 2015. | |
| Paper # | LQE2015-102 | |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2015-70 CPM2015-105 LQE2015-102 Link to ES Tech. Rep. Archives: ED2015-70 CPM2015-105 LQE2015-102 |
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| Conference Information | |
| Committee | ED LQE CPM |
| Conference Date | 2015-11-26 - 2015-11-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Osaka City University Media Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2015-11-ED-LQE-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | AlN growth on AlN/Sapphire substrate by RF-HVPE |
| Sub Title (in English) | |
| Keyword(1) | HVPE |
| Keyword(2) | AlN |
| Keyword(3) | AlN/Sapphire |
| Keyword(4) | Sputtering |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Daiki Yasui |
| 1st Author's Affiliation | Mie University (Mie Univ.) |
| 2nd Author's Name | Hideto Miyake |
| 2nd Author's Affiliation | Mie University (Mie Univ.) |
| 3rd Author's Name | Kazumasa Hiramatsu |
| 3rd Author's Affiliation | Mie University (Mie Univ.) |
| 4th Author's Name | Motoaki Iwaya |
| 4th Author's Affiliation | Meijo University (Meijo Univ.) |
| 5th Author's Name | Isamu Akasaki |
| 5th Author's Affiliation | Meijo University (Meijo Univ.) |
| 6th Author's Name | Hiroshi Amano |
| 6th Author's Affiliation | Nagoya University (Nagoya Univ.) |
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| Speaker | Author-1 |
| Date Time | 2015-11-26 11:20:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2015-70, CPM2015-105, LQE2015-102 |
| Volume (vol) | vol.115 |
| Number (no) | no.329(ED), no.330(CPM), no.331(LQE) |
| Page | pp.11-14 |
| #Pages | 4 |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) |
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