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Paper Abstract and Keywords
Presentation 2015-10-30 10:50
Ferroelectric BiFeO3 Formation with Oxigen Radical Treatment
Fuminobu Imaizumi, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa (Tohoku Univ.) SDM2015-78 Link to ES Tech. Rep. Archives: SDM2015-78
Abstract (in Japanese) (See Japanese page) 
(in English) Oxygen radical treatment was applied to sputter-deposited BiFeO3 (BFO) thin film which is expected to be used for ferroelectric memories, sensors and solar cells. The oxygen radicals were produced by a microwave excited high-density Kr/O2 plasma. It was found from X-ray diffraction (XRD) that the crystallization temperature of the BFO film could be reduced to 350 °C by applying the oxygen radical treatment before the annealing. The (110) peak area which shows the crystallinity of BFO was by 4 times than that of the BFO film annealed at 500 °C without the oxygen radical treatment. From results of XRD and X-ray photoelectron spectroscopy (XPS), the stoichiometry was dramatically improved and this suggests that the oxygen radical treatment effectively creates the nucleation sites of BiFeO3 and reduces oxygen vacancy defects. Keywords Ferroelectric material, BFO film, Radical Oxidation
Keyword (in Japanese) (See Japanese page) 
(in English) Ferroelectric material / BFO film / radical Oxidation / / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 280, SDM2015-78, pp. 41-44, Oct. 2015.
Paper # SDM2015-78 
Date of Issue 2015-10-22 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2015-10-29 - 2015-10-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2015-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Ferroelectric BiFeO3 Formation with Oxigen Radical Treatment 
Sub Title (in English)  
Keyword(1) Ferroelectric material  
Keyword(2) BFO film  
Keyword(3) radical Oxidation  
1st Author's Name Fuminobu Imaizumi  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Tetsuya Goto  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Akinobu Teramoto  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Shigetoshi Sugawa  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
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Date Time 2015-10-30 10:50:00 
Presentation Time 30 
Registration for SDM 
Paper # IEICE-SDM2015-78 
Volume (vol) IEICE-115 
Number (no) no.280 
Page pp.41-44 
#Pages IEICE-4 
Date of Issue IEICE-SDM-2015-10-22 

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