Paper Abstract and Keywords |
Presentation |
2015-10-29 15:20
Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H2 Plasma Tomoyuki Suwa, Akinobu Teramoto, Tetsuya Goto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2015-73 Link to ES Tech. Rep. Archives: SDM2015-73 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In order to flatten any crystal orientation of Si surface including Si-fin-structure and to introduce the flattening process just before the gate oxide formation in the latest LSI manufacturing process, it is strongly required that the flattening process is carried out at lower temperature. By introducing Xe/H2 plasma flattening at 400 oC just before the gate oxide formation, the breakdown field (Ebd) was improved and Ebd fluctuation became much smaller than that of conventional. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
MOS device / Si surface / Surface flattening / Plasma process / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 280, SDM2015-73, pp. 13-16, Oct. 2015. |
Paper # |
SDM2015-73 |
Date of Issue |
2015-10-22 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2015-73 Link to ES Tech. Rep. Archives: SDM2015-73 |
Conference Information |
Committee |
SDM |
Conference Date |
2015-10-29 - 2015-10-30 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Niche, Tohoku Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process Science and New Process Technology |
Paper Information |
Registration To |
SDM |
Conference Code |
2015-10-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H2 Plasma |
Sub Title (in English) |
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Keyword(1) |
MOS device |
Keyword(2) |
Si surface |
Keyword(3) |
Surface flattening |
Keyword(4) |
Plasma process |
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1st Author's Name |
Tomoyuki Suwa |
1st Author's Affiliation |
Tohoku University (Tohoku Univ.) |
2nd Author's Name |
Akinobu Teramoto |
2nd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
3rd Author's Name |
Tetsuya Goto |
3rd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
4th Author's Name |
Masaki Hirayama |
4th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
5th Author's Name |
Shigetoshi Sugawa |
5th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
6th Author's Name |
Tadahiro Ohmi |
6th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
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Speaker |
Author-1 |
Date Time |
2015-10-29 15:20:00 |
Presentation Time |
30 minutes |
Registration for |
SDM |
Paper # |
SDM2015-73 |
Volume (vol) |
vol.115 |
Number (no) |
no.280 |
Page |
pp.13-16 |
#Pages |
4 |
Date of Issue |
2015-10-22 (SDM) |
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