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Paper Abstract and Keywords
Presentation 2015-10-29 15:20
Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H2 Plasma
Tomoyuki Suwa, Akinobu Teramoto, Tetsuya Goto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2015-73 Link to ES Tech. Rep. Archives: SDM2015-73
Abstract (in Japanese) (See Japanese page) 
(in English) In order to flatten any crystal orientation of Si surface including Si-fin-structure and to introduce the flattening process just before the gate oxide formation in the latest LSI manufacturing process, it is strongly required that the flattening process is carried out at lower temperature. By introducing Xe/H2 plasma flattening at 400 oC just before the gate oxide formation, the breakdown field (Ebd) was improved and Ebd fluctuation became much smaller than that of conventional.
Keyword (in Japanese) (See Japanese page) 
(in English) MOS device / Si surface / Surface flattening / Plasma process / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 280, SDM2015-73, pp. 13-16, Oct. 2015.
Paper # SDM2015-73 
Date of Issue 2015-10-22 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2015-73 Link to ES Tech. Rep. Archives: SDM2015-73

Conference Information
Committee SDM  
Conference Date 2015-10-29 - 2015-10-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2015-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H2 Plasma 
Sub Title (in English)  
Keyword(1) MOS device  
Keyword(2) Si surface  
Keyword(3) Surface flattening  
Keyword(4) Plasma process  
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1st Author's Name Tomoyuki Suwa  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Akinobu Teramoto  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Tetsuya Goto  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Masaki Hirayama  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Shigetoshi Sugawa  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Tadahiro Ohmi  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2015-10-29 15:20:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2015-73 
Volume (vol) vol.115 
Number (no) no.280 
Page pp.13-16 
#Pages
Date of Issue 2015-10-22 (SDM) 


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