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| Presentation | 2015-10-23 10:35 Prototyping of electron emitters using heavily N-doped diamond -- Fabrication of built-in electrode and flat surface structured emitter with mold growth technique -- Taishi Ebisudani (ICU), Tomoaki Masuzawa (Shizuoka Univ.), Takatoshi Yamada (AIST), Jun Ochiai, Ichitaro Saito, Ken Okano (ICU)  ED2015-64 Link to ES Tech. Rep. Archives: ED2015-64 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Diamond is a suitable candidate for an electron emitter because it has characteristics such as negative electron affinity (NEA), chemical stability and high thermal conductivity. In particular, heavily nitrogen (N)-doped diamond shows ultra-high resistivity. Ultra-low threshold emission was reported from such diamond. The Si substrate for the mold growth that has reverse-pyramidal pits with flat-bottom was obtained by photolithography and anisotropic etching. A N-doped diamond polycrystalline film was deposited on the mold substrate using the CVD method. The Si layer of the mold substrate was removed by wet-etching until the tip of the diamond was exposed. Finally the emitter structure that has an integrated gate and flat surface was obtained. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | field emitter / negative electron affinity / nitrogen doped diamond / mold growth / chemical vapor deposition / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 264, ED2015-64, pp. 53-56, Oct. 2015. | |
| Paper # | ED2015-64 | |
| Date of Issue | 2015-10-15 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2015-64 Link to ES Tech. Rep. Archives: ED2015-64 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2015-10-22 - 2015-10-23 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2015-10-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Prototyping of electron emitters using heavily N-doped diamond |
| Sub Title (in English) | Fabrication of built-in electrode and flat surface structured emitter with mold growth technique |
| Keyword(1) | field emitter |
| Keyword(2) | negative electron affinity |
| Keyword(3) | nitrogen doped diamond |
| Keyword(4) | mold growth |
| Keyword(5) | chemical vapor deposition |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Taishi Ebisudani |
| 1st Author's Affiliation | International Christian University (ICU) |
| 2nd Author's Name | Tomoaki Masuzawa |
| 2nd Author's Affiliation | Shizuoka University (Shizuoka Univ.) |
| 3rd Author's Name | Takatoshi Yamada |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 4th Author's Name | Jun Ochiai |
| 4th Author's Affiliation | International Christian University (ICU) |
| 5th Author's Name | Ichitaro Saito |
| 5th Author's Affiliation | International Christian University (ICU) |
| 6th Author's Name | Ken Okano |
| 6th Author's Affiliation | International Christian University (ICU) |
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| Speaker | Author-1 |
| Date Time | 2015-10-23 10:35:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2015-64 |
| Volume (vol) | vol.115 |
| Number (no) | no.264 |
| Page | pp.53-56 |
| #Pages | 4 |
| Date of Issue | 2015-10-15 (ED) |
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