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| Presentation | 2015-10-23 11:50 Influence of height and atomic arrangement of nano-protrusion of gas field ion emitter on He-ion current Shigekazu Nagai, Shu Katoh, Tatsuo Iwata, Kazuo Kajiwara, Koichi Hata (Mie Univ.)  ED2015-67 Link to ES Tech. Rep. Archives: ED2015-67 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Gas field ion sources(GFIS) with high brightness property have serious problem on a low angular current density, so that a field ion current and its beam spread have to be improved. To confine half angle of beam spread of GFIS emitter, we fabricated a nano-protrusion on large base emitter by field-induced oxygen etching method. For higher He field ion current, we investigated influences of heights and atomic arrangements of nano-protrusion on field He ion current for an improvement of emission property. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Gas field ion emitter / Field-induced oxygen etching / Field ion microscopy / Tungsten / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 264, ED2015-67, pp. 65-68, Oct. 2015. | |
| Paper # | ED2015-67 | |
| Date of Issue | 2015-10-15 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2015-67 Link to ES Tech. Rep. Archives: ED2015-67 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2015-10-22 - 2015-10-23 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2015-10-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Influence of height and atomic arrangement of nano-protrusion of gas field ion emitter on He-ion current |
| Sub Title (in English) | |
| Keyword(1) | Gas field ion emitter |
| Keyword(2) | Field-induced oxygen etching |
| Keyword(3) | Field ion microscopy |
| Keyword(4) | Tungsten |
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| 1st Author's Name | Shigekazu Nagai |
| 1st Author's Affiliation | Mie University (Mie Univ.) |
| 2nd Author's Name | Shu Katoh |
| 2nd Author's Affiliation | Mie University (Mie Univ.) |
| 3rd Author's Name | Tatsuo Iwata |
| 3rd Author's Affiliation | Mie University (Mie Univ.) |
| 4th Author's Name | Kazuo Kajiwara |
| 4th Author's Affiliation | Mie University (Mie Univ.) |
| 5th Author's Name | Koichi Hata |
| 5th Author's Affiliation | Mie University (Mie Univ.) |
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| Speaker | Author-1 |
| Date Time | 2015-10-23 11:50:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2015-67 |
| Volume (vol) | vol.115 |
| Number (no) | no.264 |
| Page | pp.65-68 |
| #Pages | 4 |
| Date of Issue | 2015-10-15 (ED) |
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