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| Presentation | 2015-08-28 14:50 Development of broadband QD ridge-waveguide laser diode in 1.1μm Katsumi Yoshizawa, Yoshinori Sawado (PioneerMTC), Kouichi Akahane, Naokatsu Yamamoto (NICT)  R2015-46 EMD2015-54 CPM2015-70 OPE2015-85 LQE2015-54 Link to ES Tech. Rep. Archives: EMD2015-54 CPM2015-70 OPE2015-85 LQE2015-54 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | To develop a new optical frequency resource for the optical communications, we focused on T-Band (1000-1260nm) and the O-Band (1260-1360nm). We are promoting the research and development of optical gain devices operating in this band. The AlGaAs cladding layers and the active layer consisting of 12 layers of InAs QDs were grown by molecular beam epitaxy. A ridge waveguide structure was formed by reactive ion etching and BCB planarization process. In 1.1μm band, fabricated LD showed the wide bandwidth of 60nm with the structure of the cleaved facet mirrors. In addition, after AR coat on the cleavage plane, ASE showed wider bandwidth that can be expected about 90nm lasing bandwidth in the external cavity. We successfully developed a high-performance gain device that operates at the new 1.1μm band. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | InAs Quantum Dot / Quantum Dot Laser / Gain Device / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 198, LQE2015-54, pp. 115-118, Aug. 2015. | |
| Paper # | LQE2015-54 | |
| Date of Issue | 2015-08-20 (R, EMD, CPM, OPE, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | R2015-46 EMD2015-54 CPM2015-70 OPE2015-85 LQE2015-54 Link to ES Tech. Rep. Archives: EMD2015-54 CPM2015-70 OPE2015-85 LQE2015-54 |
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| Conference Information | |
| Committee | CPM OPE LQE R EMD |
| Conference Date | 2015-08-27 - 2015-08-28 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Aomori-Bussankan-Asupamu |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2015-08-CPM-OPE-LQE-R-EMD |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Development of broadband QD ridge-waveguide laser diode in 1.1μm |
| Sub Title (in English) | |
| Keyword(1) | InAs Quantum Dot |
| Keyword(2) | Quantum Dot Laser |
| Keyword(3) | Gain Device |
| Keyword(4) | |
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| Keyword(8) | |
| 1st Author's Name | Katsumi Yoshizawa |
| 1st Author's Affiliation | Pioneer Micro Technology Corporation (PioneerMTC) |
| 2nd Author's Name | Yoshinori Sawado |
| 2nd Author's Affiliation | Pioneer Micro Technology Corporation (PioneerMTC) |
| 3rd Author's Name | Kouichi Akahane |
| 3rd Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 4th Author's Name | Naokatsu Yamamoto |
| 4th Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
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| Speaker | Author-1 |
| Date Time | 2015-08-28 14:50:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | R2015-46, EMD2015-54, CPM2015-70, OPE2015-85, LQE2015-54 |
| Volume (vol) | vol.115 |
| Number (no) | no.194(R), no.195(EMD), no.196(CPM), no.197(OPE), no.198(LQE) |
| Page | pp.115-118 |
| #Pages | 4 |
| Date of Issue | 2015-08-20 (R, EMD, CPM, OPE, LQE) |
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