| IEICE Technical Committee Submission System Conference Paper's Information |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top Page | Go Previous | [Japanese] / [English] |
| Paper Abstract and Keywords | ||
| Presentation | 2015-08-27 11:00 Highly reliable a-InGaZnO thin-film transistors with fluorine in a gate insulator Haruka Yamazaki, Yasuaki Ishikawa, Mami Fujii, Juan Paolo Bermundo (NAIST), Eiji Takahashi, Yasunori Andoh (Nissin Electric), Yukiharu Uraoka (NAIST)  R2015-24 EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32 Link to ES Tech. Rep. Archives: EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32 |
|
| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Considerable attention has been paid to amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) as peripheral circuits for displays. However, achieving highly reliable a-IGZO TFTs continues to be a serious challenge. We propose a-IGZO TFTs with a fluorinated silicon nitride (SiNx:F) gate insulator (GI) which showed good reliability against positive bias temperature stress (PBTS) compared with those with thermally oxidized SiO2 GIs. From the result of X-ray photoelectron spectroscopy analysis, the fluorine in SiNx:F formed a bonding state with indium at the interface between SiNx:F and a-IGZO. Here we report a reliability-improvement mechanism using SiNx:F GIs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | thin-film transistor / a-IGZO / gate insulator / reliability / fluorine / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 194, R2015-24, pp. 9-11, Aug. 2015. | |
| Paper # | R2015-24 | |
| Date of Issue | 2015-08-20 (R, EMD, CPM, OPE, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | R2015-24 EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32 Link to ES Tech. Rep. Archives: EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32 |
|
| Conference Information | |
| Committee | CPM OPE LQE R EMD |
| Conference Date | 2015-08-27 - 2015-08-28 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Aomori-Bussankan-Asupamu |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | R |
| Conference Code | 2015-08-CPM-OPE-LQE-R-EMD |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Highly reliable a-InGaZnO thin-film transistors with fluorine in a gate insulator |
| Sub Title (in English) | |
| Keyword(1) | thin-film transistor |
| Keyword(2) | a-IGZO |
| Keyword(3) | gate insulator |
| Keyword(4) | reliability |
| Keyword(5) | fluorine |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Haruka Yamazaki |
| 1st Author's Affiliation | Nara institute of science and technology (NAIST) |
| 2nd Author's Name | Yasuaki Ishikawa |
| 2nd Author's Affiliation | Nara institute of science and technology (NAIST) |
| 3rd Author's Name | Mami Fujii |
| 3rd Author's Affiliation | Nara institute of science and technology (NAIST) |
| 4th Author's Name | Juan Paolo Bermundo |
| 4th Author's Affiliation | Nara institute of science and technology (NAIST) |
| 5th Author's Name | Eiji Takahashi |
| 5th Author's Affiliation | Nissin Electric Co.,Ltd (Nissin Electric) |
| 6th Author's Name | Yasunori Andoh |
| 6th Author's Affiliation | Nissin Electric Co.,Ltd (Nissin Electric) |
| 7th Author's Name | Yukiharu Uraoka |
| 7th Author's Affiliation | Nara institute of science and technology (NAIST) |
| 8th Author's Name | |
| 8th Author's Affiliation | () |
| 9th Author's Name | |
| 9th Author's Affiliation | () |
| 10th Author's Name | |
| 10th Author's Affiliation | () |
| 11th Author's Name | |
| 11th Author's Affiliation | () |
| 12th Author's Name | |
| 12th Author's Affiliation | () |
| 13th Author's Name | |
| 13th Author's Affiliation | () |
| 14th Author's Name | |
| 14th Author's Affiliation | () |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2015-08-27 11:00:00 |
| Presentation Time | 25 minutes |
| Registration for | R |
| Paper # | R2015-24, EMD2015-32, CPM2015-48, OPE2015-63, LQE2015-32 |
| Volume (vol) | vol.115 |
| Number (no) | no.194(R), no.195(EMD), no.196(CPM), no.197(OPE), no.198(LQE) |
| Page | pp.9-11 |
| #Pages | 3 |
| Date of Issue | 2015-08-20 (R, EMD, CPM, OPE, LQE) |
[Return to Top Page]