Paper Abstract and Keywords |
Presentation |
2015-08-27 10:35
Elecrically Stable IGZO Thin Film Transistors using Ionic-Liquid Gate Dielectric Hiromi Okada, Mami Fujii, Yasuaki Ishikawa (NAIST), Kazumoto Miwa (CRIEPI), Yukiharu Uraoka (NAIST), Shimpei Ono (CRIEPI) R2015-23 EMD2015-31 CPM2015-47 OPE2015-62 LQE2015-31 Link to ES Tech. Rep. Archives: EMD2015-31 CPM2015-47 OPE2015-62 LQE2015-31 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Amorphous-InGaZnO(a-IGZO) thin-film transistors (TFTs) have good characteristics such as low leakage current, high field-effect mobility (μFE) in spite of low-temperature fabrication process. These characteristics are suitable for application of flexible display. To achieve high performance and good reliability, conventional TFTs needs high temperature process. In this study, we demonstrate IGZO-TFTs with Ionic liquid dielectric with low temperature process, high carrier accumulation and low operation voltage. The TFTs show significantly low operation voltage, S.S value, and moreover they are stable for long-term voltage stress. This device shows original degradation mechanism other than conventional deterioration. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Flexible display / a-InGaZnO(a-IGZO) / Thin film transistors(TFTs) / Gate dielectric / Ionic liquid / Ion gel / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 194, R2015-23, pp. 5-8, Aug. 2015. |
Paper # |
R2015-23 |
Date of Issue |
2015-08-20 (R, EMD, CPM, OPE, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
R2015-23 EMD2015-31 CPM2015-47 OPE2015-62 LQE2015-31 Link to ES Tech. Rep. Archives: EMD2015-31 CPM2015-47 OPE2015-62 LQE2015-31 |
Conference Information |
Committee |
CPM OPE LQE R EMD |
Conference Date |
2015-08-27 - 2015-08-28 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Aomori-Bussankan-Asupamu |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
R |
Conference Code |
2015-08-CPM-OPE-LQE-R-EMD |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Elecrically Stable IGZO Thin Film Transistors using Ionic-Liquid Gate Dielectric |
Sub Title (in English) |
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Keyword(1) |
Flexible display |
Keyword(2) |
a-InGaZnO(a-IGZO) |
Keyword(3) |
Thin film transistors(TFTs) |
Keyword(4) |
Gate dielectric |
Keyword(5) |
Ionic liquid |
Keyword(6) |
Ion gel |
Keyword(7) |
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Keyword(8) |
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1st Author's Name |
Hiromi Okada |
1st Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
2nd Author's Name |
Mami Fujii |
2nd Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
3rd Author's Name |
Yasuaki Ishikawa |
3rd Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
4th Author's Name |
Kazumoto Miwa |
4th Author's Affiliation |
Central Research Institute of Electric Power Industry (CRIEPI) |
5th Author's Name |
Yukiharu Uraoka |
5th Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
6th Author's Name |
Shimpei Ono |
6th Author's Affiliation |
Central Research Institute of Electric Power Industry (CRIEPI) |
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Speaker |
Author-1 |
Date Time |
2015-08-27 10:35:00 |
Presentation Time |
25 minutes |
Registration for |
R |
Paper # |
R2015-23, EMD2015-31, CPM2015-47, OPE2015-62, LQE2015-31 |
Volume (vol) |
vol.115 |
Number (no) |
no.194(R), no.195(EMD), no.196(CPM), no.197(OPE), no.198(LQE) |
Page |
pp.5-8 |
#Pages |
4 |
Date of Issue |
2015-08-20 (R, EMD, CPM, OPE, LQE) |
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