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Paper Abstract and Keywords
Presentation 2015-08-25 09:30
[Invited Talk] Low-Power Embedded ReRAM Technology for IoT Applications
Makoto Ueki, Akira Tanabe, Hiroshi Sunamura, Mitsuru Narihiro, Kazuya Uejima, Koji Masuzaki, Naoya Furutake, Akira Mitsuiki, Koichi Takeda, Takashi Hase, Yoshihiro Hayashi (Renesas Electronics) SDM2015-65 ICD2015-34 Link to ES Tech. Rep. Archives: SDM2015-65 ICD2015-34
Abstract (in Japanese) (See Japanese page) 
(in English) A low-power 2Mb ReRAM macro was developed in 90 nm CMOS platform, demonstrating lower power data-writing (x1/7-x1/10) and faster data-reading (x2-3) as compared to a conventional flash. The memory window at -6sigma for 10 years was confirmed with a high-speed 1-bit ECC considering operating temperature ranging from -40 to 85 degree C. A pulse-modulated Off-state verify and an interface-control of Ru electrode are effective for suppressing random fluctuation of Roff readout and for sustaining the On-state retention, respectively.
Keyword (in Japanese) (See Japanese page) 
(in English) ReRAM / embedded ReRAM / low-power / noise / Random telegraph noise (RTN) / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 191, ICD2015-34, pp. 41-46, Aug. 2015.
Paper # ICD2015-34 
Date of Issue 2015-08-17 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2015-65 ICD2015-34 Link to ES Tech. Rep. Archives: SDM2015-65 ICD2015-34

Conference Information
Committee SDM ICD  
Conference Date 2015-08-24 - 2015-08-25 
Place (in Japanese) (See Japanese page) 
Place (in English) Kumamoto City 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Low voltage/low power techniques, novel devices, circuits, and applications 
Paper Information
Registration To ICD 
Conference Code 2015-08-SDM-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Low-Power Embedded ReRAM Technology for IoT Applications 
Sub Title (in English)  
Keyword(1) ReRAM  
Keyword(2) embedded ReRAM  
Keyword(3) low-power  
Keyword(4) noise  
Keyword(5) Random telegraph noise (RTN)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Makoto Ueki  
1st Author's Affiliation Renesas Electronics (Renesas Electronics)
2nd Author's Name Akira Tanabe  
2nd Author's Affiliation Renesas Electronics (Renesas Electronics)
3rd Author's Name Hiroshi Sunamura  
3rd Author's Affiliation Renesas Electronics (Renesas Electronics)
4th Author's Name Mitsuru Narihiro  
4th Author's Affiliation Renesas Electronics (Renesas Electronics)
5th Author's Name Kazuya Uejima  
5th Author's Affiliation Renesas Electronics (Renesas Electronics)
6th Author's Name Koji Masuzaki  
6th Author's Affiliation Renesas Electronics (Renesas Electronics)
7th Author's Name Naoya Furutake  
7th Author's Affiliation Renesas Electronics (Renesas Electronics)
8th Author's Name Akira Mitsuiki  
8th Author's Affiliation Renesas Electronics (Renesas Electronics)
9th Author's Name Koichi Takeda  
9th Author's Affiliation Renesas Electronics (Renesas Electronics)
10th Author's Name Takashi Hase  
10th Author's Affiliation Renesas Electronics (Renesas Electronics)
11th Author's Name Yoshihiro Hayashi  
11th Author's Affiliation Renesas Electronics (Renesas Electronics)
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Speaker Author-1 
Date Time 2015-08-25 09:30:00 
Presentation Time 50 minutes 
Registration for ICD 
Paper # SDM2015-65, ICD2015-34 
Volume (vol) vol.115 
Number (no) no.190(SDM), no.191(ICD) 
Page pp.41-46 
#Pages
Date of Issue 2015-08-17 (SDM, ICD) 


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