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| Presentation | 2015-07-25 11:30 Delta-Sigma Strain Sensor Using a Resonant Tunneling Diode Koichi Maezawa, Yuichiro Kakutani, Taishu Nakayama, Takumi Tajika, Masayuki Mori (Univ. Toyama)  ED2015-46 Link to ES Tech. Rep. Archives: ED2015-46 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A negative differential resistance (NDR) of resonant tunneling diodes (RTDs) is a basis for high frequency oscillators. Over 1 THz oscillations have been already reported with the RTD oscillators. Besides THz signal sources. the RTD oscillatiors can be a basis for high performance sensors. In this paper we discuss a strain sensor based on the frequency modulation of a RTD oscillator fabricated on a cantilever. Employing frequency $DeltaSigma$ modulation technique, ultra high dynamic range and wide frequency range are expected for this implementation. We discuss the design and fabrication process of the RTD strain sensors, and demonstrate the noise shaping behavior, which is a most important feature of the $DeltaSigma$ modulation. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | resonant tunneling diode / oscillator / piezo effect / $DeltaSigma$ modulation / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 156, ED2015-46, pp. 51-55, July 2015. | |
| Paper # | ED2015-46 | |
| Date of Issue | 2015-07-17 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2015-46 Link to ES Tech. Rep. Archives: ED2015-46 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2015-07-24 - 2015-07-25 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | IT Business Plaza Musashi 5F |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Semiconductor Processes and Devices |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2015-07-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Delta-Sigma Strain Sensor Using a Resonant Tunneling Diode |
| Sub Title (in English) | |
| Keyword(1) | resonant tunneling diode |
| Keyword(2) | oscillator |
| Keyword(3) | piezo effect |
| Keyword(4) | $DeltaSigma$ modulation |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Koichi Maezawa |
| 1st Author's Affiliation | University of Toyama (Univ. Toyama) |
| 2nd Author's Name | Yuichiro Kakutani |
| 2nd Author's Affiliation | University of Toyama (Univ. Toyama) |
| 3rd Author's Name | Taishu Nakayama |
| 3rd Author's Affiliation | University of Toyama (Univ. Toyama) |
| 4th Author's Name | Takumi Tajika |
| 4th Author's Affiliation | University of Toyama (Univ. Toyama) |
| 5th Author's Name | Masayuki Mori |
| 5th Author's Affiliation | University of Toyama (Univ. Toyama) |
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| Speaker | Author-1 |
| Date Time | 2015-07-25 11:30:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2015-46 |
| Volume (vol) | vol.115 |
| Number (no) | no.156 |
| Page | pp.51-55 |
| #Pages | 5 |
| Date of Issue | 2015-07-17 (ED) |
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