Paper Abstract and Keywords |
Presentation |
2015-07-24 13:15
Electrical characteristics of N-polar p-type GaN Schottky contacts Toshichika Aoki (Univ. of Fukui), Tomoyuki Tanikawa, Ryuji Katayama, Takashi Matsuoka (Tohoku Univ.), Kenji Shiojima (Univ. of Fukui) ED2015-36 Link to ES Tech. Rep. Archives: ED2015-36 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Electrical characteristics of N-polar p-GaN Schottky contacts by using current-voltage (I-V), capacitance-voltage (C-V) and photoresponse (PR) measurements have been investigated. The Schottky barrier heights (q$phi$B) obtained were by more than 1 eV lower than that of Ga-polar samples. In addition, the memory effect, which is caused by the carrier capture and emission processes from Ga vacancy defects located at the interface, was not observed in the I-V characteristics. It is consistent with the fact that no peak was detected in the high-temperature isothermal capacitance transient spectroscopy (H-ICTS) spectra. These results suggest that the top N-layer can suppress the out-diffusion of Ga atoms on the N-polar surface. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
N-polar / p-GaN / Schottky contact / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 156, ED2015-36, pp. 1-4, July 2015. |
Paper # |
ED2015-36 |
Date of Issue |
2015-07-17 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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ED2015-36 Link to ES Tech. Rep. Archives: ED2015-36 |
Conference Information |
Committee |
ED |
Conference Date |
2015-07-24 - 2015-07-25 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
IT Business Plaza Musashi 5F |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Semiconductor Processes and Devices |
Paper Information |
Registration To |
ED |
Conference Code |
2015-07-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Electrical characteristics of N-polar p-type GaN Schottky contacts |
Sub Title (in English) |
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Keyword(1) |
N-polar |
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p-GaN |
Keyword(3) |
Schottky contact |
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1st Author's Name |
Toshichika Aoki |
1st Author's Affiliation |
University of Fukui (Univ. of Fukui) |
2nd Author's Name |
Tomoyuki Tanikawa |
2nd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
3rd Author's Name |
Ryuji Katayama |
3rd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
4th Author's Name |
Takashi Matsuoka |
4th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
5th Author's Name |
Kenji Shiojima |
5th Author's Affiliation |
University of Fukui (Univ. of Fukui) |
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Speaker |
Author-1 |
Date Time |
2015-07-24 13:15:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2015-36 |
Volume (vol) |
vol.115 |
Number (no) |
no.156 |
Page |
pp.1-4 |
#Pages |
4 |
Date of Issue |
2015-07-17 (ED) |