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Presentation 2015-06-19 13:20
Impact of Embedded Ti Nanodots on Resistive Switching Characteristics of Si-rich Oxides
Yuusuke Kato, Takashi Arai, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2015-46 Link to ES Tech. Rep. Archives: SDM2015-46
Abstract (in Japanese) (See Japanese page) 
(in English) We have studied the formation of Ti Nanodots (NDs) by remote-H2 plasma treatment and an impact of Ti-NDs embedding into SiOx on the resistive switching behaviors because it is expected that NDs can trigger the formation of the conductive filament path in SiOx. AFM analysis shows that a combination of a Ge(20 nm)/Ti(3 nm) stacked layer and subsequent H2-RP exposure without external heating is effective to form the high-density Ti-NDs, where Ge layer was used as a barrier layer against oxidation of the ultrathin Ti layer. XPS analysis confirmed that the Ge layer was completely etched away by H2-RP exposure and surface oxidation of Ti-NDs proceeds during air exposure. After fabrication of Si-rich oxide (SiOx) ReRAM with the NDs, resistive switching characteristics were measured from I-V curves and compared to the results obtained from the diodes without the NDs. ON/OFF ratio in resistance was increased with embedding the NDs, which indicates that the Ti oxide formed at embedded Ti-NDs surface reduces the current levels through the SiOx. In addition, embedding of Ti NDs in SiOx was found to be effective to separate the operation voltages between SET and RESET processes.
Keyword (in Japanese) (See Japanese page) 
(in English) Resistive Random Access Memories (ReRAMs) / Ti Nano-dots (NDs) / Si-rich Oxide (SiOx) / / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 108, SDM2015-46, pp. 41-45, June 2015.
Paper # SDM2015-46 
Date of Issue 2015-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2015-46 Link to ES Tech. Rep. Archives: SDM2015-46

Conference Information
Committee SDM  
Conference Date 2015-06-19 - 2015-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2015-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Impact of Embedded Ti Nanodots on Resistive Switching Characteristics of Si-rich Oxides 
Sub Title (in English)  
Keyword(1) Resistive Random Access Memories (ReRAMs)  
Keyword(2) Ti Nano-dots (NDs)  
Keyword(3) Si-rich Oxide (SiOx)  
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1st Author's Name Yuusuke Kato  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Takashi Arai  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Akio Ohta  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Katsunori Makihara  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
5th Author's Name Seiichi Miyazaki  
5th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2015-06-19 13:20:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2015-46 
Volume (vol) vol.115 
Number (no) no.108 
Page pp.41-45 
#Pages
Date of Issue 2015-06-12 (SDM) 


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