Paper Abstract and Keywords |
Presentation |
2015-06-19 13:20
Impact of Embedded Ti Nanodots on Resistive Switching Characteristics of Si-rich Oxides Yuusuke Kato, Takashi Arai, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2015-46 Link to ES Tech. Rep. Archives: SDM2015-46 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have studied the formation of Ti Nanodots (NDs) by remote-H2 plasma treatment and an impact of Ti-NDs embedding into SiOx on the resistive switching behaviors because it is expected that NDs can trigger the formation of the conductive filament path in SiOx. AFM analysis shows that a combination of a Ge(20 nm)/Ti(3 nm) stacked layer and subsequent H2-RP exposure without external heating is effective to form the high-density Ti-NDs, where Ge layer was used as a barrier layer against oxidation of the ultrathin Ti layer. XPS analysis confirmed that the Ge layer was completely etched away by H2-RP exposure and surface oxidation of Ti-NDs proceeds during air exposure. After fabrication of Si-rich oxide (SiOx) ReRAM with the NDs, resistive switching characteristics were measured from I-V curves and compared to the results obtained from the diodes without the NDs. ON/OFF ratio in resistance was increased with embedding the NDs, which indicates that the Ti oxide formed at embedded Ti-NDs surface reduces the current levels through the SiOx. In addition, embedding of Ti NDs in SiOx was found to be effective to separate the operation voltages between SET and RESET processes. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Resistive Random Access Memories (ReRAMs) / Ti Nano-dots (NDs) / Si-rich Oxide (SiOx) / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 108, SDM2015-46, pp. 41-45, June 2015. |
Paper # |
SDM2015-46 |
Date of Issue |
2015-06-12 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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SDM2015-46 Link to ES Tech. Rep. Archives: SDM2015-46 |
Conference Information |
Committee |
SDM |
Conference Date |
2015-06-19 - 2015-06-19 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
VBL, Nagoya Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Material Science and Process Technology for MOS Devices and Memories |
Paper Information |
Registration To |
SDM |
Conference Code |
2015-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Impact of Embedded Ti Nanodots on Resistive Switching Characteristics of Si-rich Oxides |
Sub Title (in English) |
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Keyword(1) |
Resistive Random Access Memories (ReRAMs) |
Keyword(2) |
Ti Nano-dots (NDs) |
Keyword(3) |
Si-rich Oxide (SiOx) |
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1st Author's Name |
Yuusuke Kato |
1st Author's Affiliation |
Nagoya University (Nagoya Univ.) |
2nd Author's Name |
Takashi Arai |
2nd Author's Affiliation |
Nagoya University (Nagoya Univ.) |
3rd Author's Name |
Akio Ohta |
3rd Author's Affiliation |
Nagoya University (Nagoya Univ.) |
4th Author's Name |
Katsunori Makihara |
4th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
5th Author's Name |
Seiichi Miyazaki |
5th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
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Speaker |
Author-1 |
Date Time |
2015-06-19 13:20:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2015-46 |
Volume (vol) |
vol.115 |
Number (no) |
no.108 |
Page |
pp.41-45 |
#Pages |
5 |
Date of Issue |
2015-06-12 (SDM) |
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