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| Presentation | 2015-06-19 11:10 [Invited Lecture] Characteristics of nitrogen incorporation at SiC/SiO2 interface on Si-face and C-face 4H-SiC Daisuke Mori, Kei Inoue, Hideaki Teranishi, Takayuki Hirose, Aki Takigawa (Fuji Electric)  SDM2015-42 Link to ES Tech. Rep. Archives: SDM2015-42 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The chemical bonding states of Si and N at nitrided SiC/SiO2 interface were characterized by synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) for (0001)-face (Si-face) and (000-1)-face (C-face). The results indicate that the most of the N atoms at the interface are tri-coordinated nitrogen, Si3N, on both Si-face and C-face. The amount of N on C-face is greater than that on Si-face. The N atoms may passivate the Si dangling bond by forming Si3N bonding. The Si suboxides on C-face were also greater than that on Si-face, which suggests the disorder of the atomic arrangement at SiC/SiO2 interface would be large on C-face. We discussed the reason for the difference of the amount of N at the interface between Si-face and C-face by assuming the detailed atomic arrangement at SiC/SiO2 interface. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | 4H-SiC / MOS / SiO2 / interface / nitrogen / X-ray photoelectron spectroscopy / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 108, SDM2015-42, pp. 21-26, June 2015. | |
| Paper # | SDM2015-42 | |
| Date of Issue | 2015-06-12 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2015-42 Link to ES Tech. Rep. Archives: SDM2015-42 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2015-06-19 - 2015-06-19 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | VBL, Nagoya Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2015-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characteristics of nitrogen incorporation at SiC/SiO2 interface on Si-face and C-face 4H-SiC |
| Sub Title (in English) | |
| Keyword(1) | 4H-SiC |
| Keyword(2) | MOS |
| Keyword(3) | SiO2 |
| Keyword(4) | interface |
| Keyword(5) | nitrogen |
| Keyword(6) | X-ray photoelectron spectroscopy |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Daisuke Mori |
| 1st Author's Affiliation | Fuji Electric Co., Ltd (Fuji Electric) |
| 2nd Author's Name | Kei Inoue |
| 2nd Author's Affiliation | Fuji Electric Co., Ltd (Fuji Electric) |
| 3rd Author's Name | Hideaki Teranishi |
| 3rd Author's Affiliation | Fuji Electric Co., Ltd (Fuji Electric) |
| 4th Author's Name | Takayuki Hirose |
| 4th Author's Affiliation | Fuji Electric Co., Ltd (Fuji Electric) |
| 5th Author's Name | Aki Takigawa |
| 5th Author's Affiliation | Fuji Electric Co., Ltd (Fuji Electric) |
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| Speaker | Author-1 |
| Date Time | 2015-06-19 11:10:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2015-42 |
| Volume (vol) | vol.115 |
| Number (no) | no.108 |
| Page | pp.21-26 |
| #Pages | 6 |
| Date of Issue | 2015-06-12 (SDM) |
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