Paper Abstract and Keywords |
Presentation |
2015-06-19 14:15
Understanding of Schottky Barrier Height Modulation at NiGe/Ge Interfaces for Metal S/D Ge CMOS Technology Hiroshi Oka, Yuya Minoura, Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2015-48 Link to ES Tech. Rep. Archives: SDM2015-48 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Besides low solubility and activation rate of n-type dopant in Ge, Fermi level pinning (FLP) at metal/Ge interface leads to a significant increase in parasitic resistance in Ge n-MOSFET. Although metal-S/D is a plausible way to reduce parasitic resistance in scaled MOSFET, high electron Schottky barrier height (eSBH) due to FLP is still a critical issue in metal-S/D n-MOSFET. Recently, we have reported eSBH reduction of NiGe/Ge contacts using P+ implantation after germanidation. However, the mechanism of eSBH modulation and suitable P+ profiles in NiGe/Ge contacts are still unclear. In this study, we investigated the diffusion and activation behavior of P atoms in NiGe/Ge systems and demonstrated metal-S/D Ge MOSFET using eSBH-controlled NiGe/Ge junctions. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Germanium / Fermi level pinning / Metal source/drain / P ion implantation / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 108, SDM2015-48, pp. 51-55, June 2015. |
Paper # |
SDM2015-48 |
Date of Issue |
2015-06-12 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2015-48 Link to ES Tech. Rep. Archives: SDM2015-48 |
Conference Information |
Committee |
SDM |
Conference Date |
2015-06-19 - 2015-06-19 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
VBL, Nagoya Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Material Science and Process Technology for MOS Devices and Memories |
Paper Information |
Registration To |
SDM |
Conference Code |
2015-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Understanding of Schottky Barrier Height Modulation at NiGe/Ge Interfaces for Metal S/D Ge CMOS Technology |
Sub Title (in English) |
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Keyword(1) |
Germanium |
Keyword(2) |
Fermi level pinning |
Keyword(3) |
Metal source/drain |
Keyword(4) |
P ion implantation |
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1st Author's Name |
Hiroshi Oka |
1st Author's Affiliation |
Osaka University (Osaka Univ.) |
2nd Author's Name |
Yuya Minoura |
2nd Author's Affiliation |
Osaka University (Osaka Univ.) |
3rd Author's Name |
Ryohei Asahara |
3rd Author's Affiliation |
Osaka University (Osaka Univ.) |
4th Author's Name |
Takuji Hosoi |
4th Author's Affiliation |
Osaka University (Osaka Univ.) |
5th Author's Name |
Takayoshi Shimura |
5th Author's Affiliation |
Osaka University (Osaka Univ.) |
6th Author's Name |
Heiji Watanabe |
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Osaka University (Osaka Univ.) |
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Speaker |
Author-1 |
Date Time |
2015-06-19 14:15:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2015-48 |
Volume (vol) |
vol.115 |
Number (no) |
no.108 |
Page |
pp.51-55 |
#Pages |
5 |
Date of Issue |
2015-06-12 (SDM) |
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