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Paper Abstract and Keywords
Presentation 2015-06-19 14:15
Understanding of Schottky Barrier Height Modulation at NiGe/Ge Interfaces for Metal S/D Ge CMOS Technology
Hiroshi Oka, Yuya Minoura, Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2015-48 Link to ES Tech. Rep. Archives: SDM2015-48
Abstract (in Japanese) (See Japanese page) 
(in English) Besides low solubility and activation rate of n-type dopant in Ge, Fermi level pinning (FLP) at metal/Ge interface leads to a significant increase in parasitic resistance in Ge n-MOSFET. Although metal-S/D is a plausible way to reduce parasitic resistance in scaled MOSFET, high electron Schottky barrier height (eSBH) due to FLP is still a critical issue in metal-S/D n-MOSFET. Recently, we have reported eSBH reduction of NiGe/Ge contacts using P+ implantation after germanidation. However, the mechanism of eSBH modulation and suitable P+ profiles in NiGe/Ge contacts are still unclear. In this study, we investigated the diffusion and activation behavior of P atoms in NiGe/Ge systems and demonstrated metal-S/D Ge MOSFET using eSBH-controlled NiGe/Ge junctions.
Keyword (in Japanese) (See Japanese page) 
(in English) Germanium / Fermi level pinning / Metal source/drain / P ion implantation / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 108, SDM2015-48, pp. 51-55, June 2015.
Paper # SDM2015-48 
Date of Issue 2015-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2015-48 Link to ES Tech. Rep. Archives: SDM2015-48

Conference Information
Committee SDM  
Conference Date 2015-06-19 - 2015-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2015-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Understanding of Schottky Barrier Height Modulation at NiGe/Ge Interfaces for Metal S/D Ge CMOS Technology 
Sub Title (in English)  
Keyword(1) Germanium  
Keyword(2) Fermi level pinning  
Keyword(3) Metal source/drain  
Keyword(4) P ion implantation  
1st Author's Name Hiroshi Oka  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name Yuya Minoura  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Ryohei Asahara  
3rd Author's Affiliation Osaka University (Osaka Univ.)
4th Author's Name Takuji Hosoi  
4th Author's Affiliation Osaka University (Osaka Univ.)
5th Author's Name Takayoshi Shimura  
5th Author's Affiliation Osaka University (Osaka Univ.)
6th Author's Name Heiji Watanabe  
6th Author's Affiliation Osaka University (Osaka Univ.)
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Date Time 2015-06-19 14:15:00 
Presentation Time 20 
Registration for SDM 
Paper # IEICE-SDM2015-48 
Volume (vol) IEICE-115 
Number (no) no.108 
Page pp.51-55 
#Pages IEICE-5 
Date of Issue IEICE-SDM-2015-06-12 

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