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Paper Abstract and Keywords
Presentation 2015-06-19 11:30
[Invited Lecture] Effect of oxynitridation annealing on defect properties at SiO2/SiC MOS interface
Wakana Takeuchi (Nagoya Univ.), Kensaku Yamamoto (DENSO CORP.), Mitsuo Sakashita (Nagoya Univ.), Takashi Kanemura (DENSO CORP.), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-43 Link to ES Tech. Rep. Archives: SDM2015-43
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated the effect of NO-annealing for SiO2/4H-SiC interface properties. The electrical properties of the NO-annealed MOS capacitor sample are different from that of the wet-annealed sample. The NO-annealing generates positive charges in the insulator layer. The interface state density, Dit from Ei+1.5 eV (EC−0.1 eV) to an energy near the conduction band edge increases by NO-annealing. The type of Dit near the conduction band edge in the nitrided SiO2/SiC interface is identified as donor. It is considered that Coulomb scattering causes decreasing the n-channel mobility of the SiO2/ SiC interface by NO-annealing.
Keyword (in Japanese) (See Japanese page) 
(in English) 4H-SiC / interface state density / SiO2/SiC interface / NO-annealing / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 108, SDM2015-43, pp. 27-30, June 2015.
Paper # SDM2015-43 
Date of Issue 2015-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2015-43 Link to ES Tech. Rep. Archives: SDM2015-43

Conference Information
Committee SDM  
Conference Date 2015-06-19 - 2015-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2015-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of oxynitridation annealing on defect properties at SiO2/SiC MOS interface 
Sub Title (in English)  
Keyword(1) 4H-SiC  
Keyword(2) interface state density  
Keyword(3) SiO2/SiC interface  
Keyword(4) NO-annealing  
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1st Author's Name Wakana Takeuchi  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Kensaku Yamamoto  
2nd Author's Affiliation DENSO CORPORATION (DENSO CORP.)
3rd Author's Name Mitsuo Sakashita  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Takashi Kanemura  
4th Author's Affiliation DENSO CORPORATION (DENSO CORP.)
5th Author's Name Osamu Nakatsuka  
5th Author's Affiliation Nagoya University (Nagoya Univ.)
6th Author's Name Shigeaki Zaima  
6th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker
Date Time 2015-06-19 11:30:00 
Presentation Time 20 
Registration for SDM 
Paper # IEICE-SDM2015-43 
Volume (vol) IEICE-115 
Number (no) no.108 
Page pp.27-30 
#Pages IEICE-4 
Date of Issue IEICE-SDM-2015-06-12 


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