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Paper Abstract and Keywords
Presentation 2015-06-19 16:10
Improvements of electrical properties of wafer-bonded GeOI substrates with ultrathin Al2O3/SiO2 hybrid BOX layers by post-annealing
Keisuke Yoshida, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ.) SDM2015-53 Link to ES Tech. Rep. Archives: SDM2015-53
Abstract (in Japanese) (See Japanese page) 
(in English) The electrical properties of wafer-bonded germanium (001)-on-insulator (Ge (001)-OI) substrates with Al2O3/SiO2 hybrid buried oxide (BOX) post-annealed in various ambiences at 300-500ºC were investigated using the four-point probe pseudo-metal-oxide-semiconductor field effect transistor (pseudo-MOSFET) method. After post-annealing, both accumulation and inversion modes of transistor operation were observed with hysteresis in the channel conductance versus gate voltage curves. The threshold voltage shift from the ideal threshold voltage (~0 V) caused by interface defects was improved. The GeOI substrates post-annealed in an O2 ambience at 400ºC showed the improvement most remarkably.
Keyword (in Japanese) (See Japanese page) 
(in English) MOSFET / Al2O3 / germanium-on-insulator (GeOI) / / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 108, SDM2015-53, pp. 81-86, June 2015.
Paper # SDM2015-53 
Date of Issue 2015-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2015-53 Link to ES Tech. Rep. Archives: SDM2015-53

Conference Information
Committee SDM  
Conference Date 2015-06-19 - 2015-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2015-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Improvements of electrical properties of wafer-bonded GeOI substrates with ultrathin Al2O3/SiO2 hybrid BOX layers by post-annealing 
Sub Title (in English)  
Keyword(1) MOSFET  
Keyword(2) Al2O3  
Keyword(3) germanium-on-insulator (GeOI)  
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1st Author's Name Keisuke Yoshida  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name Shotaro Takeuchi  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Yoshiaki Nakamura  
3rd Author's Affiliation Osaka University (Osaka Univ.)
4th Author's Name Akira Sakai  
4th Author's Affiliation Osaka University (Osaka Univ.)
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Speaker Author-2 
Date Time 2015-06-19 16:10:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2015-53 
Volume (vol) vol.115 
Number (no) no.108 
Page pp.81-86 
#Pages
Date of Issue 2015-06-12 (SDM) 


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