Paper Abstract and Keywords |
Presentation |
2015-06-19 09:50
[Invited Lecture]
Characterization of traps in MOCVD n-GaN by capacitance transient spectroscopy Yutaka Tokuda (Aich Inst. of Technol.) SDM2015-39 Link to ES Tech. Rep. Archives: SDM2015-39 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Capacitance transient spectroscopy based on the depletion layer capacitance transients resulting from carrier emission from filled traps has been used to study traps in MOCVD n-GaN. For Schottky diodes employed in this study, electron traps are detected with Deep level transient spectroscopy (DLTS) using bias pulses, while hole traps with Minority carrier transient spectroscopy (MCTS) using above-band-gap light pulses. A total of nine electron traps and a total of five hole traps are observed in MOCVD n-GaN. Among them, the Ev+0.86~0.89 eV hole trap has high trap concentration(~1016 cm-3)and might affect the performance of various GaN-based devices. It is possible that the Ev+0.86~0.89 eV hole trap is associated with carbon- and Ga vacancy-related defects. We present a method to distinguish between Ga vacancy-related and carbon-related hole traps by the combination of MCTS and optical deep level transient spectroscopy (ODLTS) using below-band-gap light pulses. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / trap / DLTS / MCTS / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 108, SDM2015-39, pp. 5-10, June 2015. |
Paper # |
SDM2015-39 |
Date of Issue |
2015-06-12 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2015-39 Link to ES Tech. Rep. Archives: SDM2015-39 |
Conference Information |
Committee |
SDM |
Conference Date |
2015-06-19 - 2015-06-19 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
VBL, Nagoya Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Material Science and Process Technology for MOS Devices and Memories |
Paper Information |
Registration To |
SDM |
Conference Code |
2015-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Characterization of traps in MOCVD n-GaN by capacitance transient spectroscopy |
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GaN |
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trap |
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DLTS |
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MCTS |
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Yutaka Tokuda |
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Aichi Institute of Technology (Aich Inst. of Technol.) |
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Speaker |
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Date Time |
2015-06-19 09:50:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2015-39 |
Volume (vol) |
vol.115 |
Number (no) |
no.108 |
Page |
pp.5-10 |
#Pages |
6 |
Date of Issue |
2015-06-12 (SDM) |