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| Presentation | 2015-05-28 17:05 Device simulation of NO2-exposed H-terminated diamond FETs with Al2O3 insulator Toshiyuki Oishi, Ryutaro Higashi, Kazuya Harada, Yuta Koga (Saga Univ.), Kazuyuki Hirama (NTT), Makoto Kasu (Saga Univ.)  ED2015-24 CPM2015-9 SDM2015-26 Link to ES Tech. Rep. Archives: ED2015-24 CPM2015-9 SDM2015-26 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | This paper investigated the simulation model for NO2-exposed H-terminated diamond FETs with Al2O3 insulator gate, which have very good DC/RF characteristics and thermally stable operation. The NO2 adsorption and H terminated layer were replaced to fixed charges at the interface between the Al2O3 insulator and diamond. The simulation results agreed qualitatively with the experimental data. The formation of the two dimensional hole gas at on-state was confirmed by estimating band alignment and hole concentration profile. Moreover, drain current response was calculated for sinusoidal input of the gate electrode. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Diamond / Field effect transistor / NO2 insulator gate / Device simulation / Al2O3 insulator / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 63, ED2015-24, pp. 41-44, May 2015. | |
| Paper # | ED2015-24 | |
| Date of Issue | 2015-05-21 (ED, CPM, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2015-24 CPM2015-9 SDM2015-26 Link to ES Tech. Rep. Archives: ED2015-24 CPM2015-9 SDM2015-26 |
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| Conference Information | |
| Committee | ED CPM SDM |
| Conference Date | 2015-05-28 - 2015-05-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Venture Business Laboratory, Toyohashi University of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | crystal growth、devices characterization , etc. |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2015-05-ED-CPM-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Device simulation of NO2-exposed H-terminated diamond FETs with Al2O3 insulator |
| Sub Title (in English) | |
| Keyword(1) | Diamond |
| Keyword(2) | Field effect transistor |
| Keyword(3) | NO2 insulator gate |
| Keyword(4) | Device simulation |
| Keyword(5) | Al2O3 insulator |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Toshiyuki Oishi |
| 1st Author's Affiliation | Saga University (Saga Univ.) |
| 2nd Author's Name | Ryutaro Higashi |
| 2nd Author's Affiliation | Saga University (Saga Univ.) |
| 3rd Author's Name | Kazuya Harada |
| 3rd Author's Affiliation | Saga University (Saga Univ.) |
| 4th Author's Name | Yuta Koga |
| 4th Author's Affiliation | Saga University (Saga Univ.) |
| 5th Author's Name | Kazuyuki Hirama |
| 5th Author's Affiliation | Nippon Telegraph and Telephone Corporation (NTT) |
| 6th Author's Name | Makoto Kasu |
| 6th Author's Affiliation | Saga University (Saga Univ.) |
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| Speaker | Author-1 |
| Date Time | 2015-05-28 17:05:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2015-24, CPM2015-9, SDM2015-26 |
| Volume (vol) | vol.115 |
| Number (no) | no.63(ED), no.64(CPM), no.65(SDM) |
| Page | pp.41-44 |
| #Pages | 4 |
| Date of Issue | 2015-05-21 (ED, CPM, SDM) |
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