| IEICE Technical Committee Submission System Conference Paper's Information |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top Page | Go Previous | [Japanese] / [English] |
| Paper Abstract and Keywords | ||
| Presentation | 2015-05-28 15:15 Control of N composition of GaAsN alloy grown by surface nitridation Noriyuki Urakami, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.)  ED2015-20 CPM2015-5 SDM2015-22 Link to ES Tech. Rep. Archives: ED2015-20 CPM2015-5 SDM2015-22 |
|
| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We researched growth conditions effect for N composition and luminescence property on dilute nitride GaAsN alloy grown by repeating surface nitridation and GaAs regrowth of few monolayer. Nitridation surface of GaAs (001) above 540 °C indicated the change process to N-stabilized surface by the increase of nitridation time because observation the RHEED patterns changed from (2×4) to (1×4) or (3×4). In cases of temperature below 540 °C, c(4×4)pattern of GaAs surface was same before and after nitridation. N composition of the GaAsN alloys strongly depended of the growth temperature, i.e.;, N composition saturated with 2.2% at 600 °C, but N composition at 550 °C increased by the increase of nitridation time. N composition was controlled between 1 to 5% by the variation of the growth temperature and thickness of GaAs overlayer. While the increase of interruption time after nitridation occurred the decrease of N composition, it had no practical impact on the luminescence properties. The thickness of GaAs overlayer was investigated to increase layer thickness of GaAsN alloy. The thickness of GaAs overlayer was necessary above 4 ML because of treatment of flatness of GaAs overlayer. The integrated RT-PL intensity of surface nitridation was increased 8 times higher than that of a conventional growth method. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Surface Nitridation / δ doping / Dilute nitride / III-V-N alloy / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 63, ED2015-20, pp. 21-26, May 2015. | |
| Paper # | ED2015-20 | |
| Date of Issue | 2015-05-21 (ED, CPM, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2015-20 CPM2015-5 SDM2015-22 Link to ES Tech. Rep. Archives: ED2015-20 CPM2015-5 SDM2015-22 |
|
| Conference Information | |
| Committee | ED CPM SDM |
| Conference Date | 2015-05-28 - 2015-05-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Venture Business Laboratory, Toyohashi University of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | crystal growth、devices characterization , etc. |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2015-05-ED-CPM-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Control of N composition of GaAsN alloy grown by surface nitridation |
| Sub Title (in English) | |
| Keyword(1) | Surface Nitridation |
| Keyword(2) | δ doping |
| Keyword(3) | Dilute nitride |
| Keyword(4) | III-V-N alloy |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Noriyuki Urakami |
| 1st Author's Affiliation | Toyohashi University of Technology (Toyohashi Tech.) |
| 2nd Author's Name | Keisuke Yamane |
| 2nd Author's Affiliation | Toyohashi University of Technology (Toyohashi Tech.) |
| 3rd Author's Name | Hiroto Sekiguchi |
| 3rd Author's Affiliation | Toyohashi University of Technology (Toyohashi Tech.) |
| 4th Author's Name | Hiroshi Okada |
| 4th Author's Affiliation | Toyohashi University of Technology (Toyohashi Tech.) |
| 5th Author's Name | Akihiro Wakahara |
| 5th Author's Affiliation | Toyohashi University of Technology (Toyohashi Tech.) |
| 6th Author's Name | |
| 6th Author's Affiliation | () |
| 7th Author's Name | |
| 7th Author's Affiliation | () |
| 8th Author's Name | |
| 8th Author's Affiliation | () |
| 9th Author's Name | |
| 9th Author's Affiliation | () |
| 10th Author's Name | |
| 10th Author's Affiliation | () |
| 11th Author's Name | |
| 11th Author's Affiliation | () |
| 12th Author's Name | |
| 12th Author's Affiliation | () |
| 13th Author's Name | |
| 13th Author's Affiliation | () |
| 14th Author's Name | |
| 14th Author's Affiliation | () |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2015-05-28 15:15:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2015-20, CPM2015-5, SDM2015-22 |
| Volume (vol) | vol.115 |
| Number (no) | no.63(ED), no.64(CPM), no.65(SDM) |
| Page | pp.21-26 |
| #Pages | 6 |
| Date of Issue | 2015-05-21 (ED, CPM, SDM) |
[Return to Top Page]