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Paper Abstract and Keywords
Presentation 2015-05-28 16:05
Schottky barrier diodes of high mobility β-Ga2O3 (-201) single crystals grown by edge-defined-fed growth method
Yuta Koga, Kazuya Harada, Kenji Hanada, Toshiyuki Oishi, Makoto Kasu (Saga Univ.) ED2015-22 CPM2015-7 SDM2015-24 Link to ES Tech. Rep. Archives: ED2015-22 CPM2015-7 SDM2015-24
Abstract (in Japanese) (See Japanese page) 
(in English) High Hall electron mobility and its high performances of Schottky barrier diodes on edge-defined film-fed grown (2 &#773;01) &#61538;-Ga2O3 single crystals have been demonstrated. High electron mobility of 886 cm2/V/s at 85 K, and 153 cm2/V/s at 300 K. Temperature dependence of electron mobility was fitted by theoretical values for specific scattering mechanisms, and we found that the electron mobility for > 200K is limited by optical phonon scattering and for < 100 K by ionized impurity scattering. On the high-purity crystal, we have fabricated Schottky barrier diodes with Ni Schottky contacts. The current density of forward voltage of 70.3 A/cm2 at 2.0V was obtained and a Schottky barrier height of 1.25 eV and nearly idea ideality factor of 1.01 were extracted.
Keyword (in Japanese) (See Japanese page) 
(in English) Gallium oxide / Schottky barrier diode / electron mobility / / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 63, ED2015-22, pp. 31-34, May 2015.
Paper # ED2015-22 
Date of Issue 2015-05-21 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2015-22 CPM2015-7 SDM2015-24 Link to ES Tech. Rep. Archives: ED2015-22 CPM2015-7 SDM2015-24

Conference Information
Committee ED CPM SDM  
Conference Date 2015-05-28 - 2015-05-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Venture Business Laboratory, Toyohashi University of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) crystal growth、devices characterization , etc. 
Paper Information
Registration To ED 
Conference Code 2015-05-ED-CPM-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Schottky barrier diodes of high mobility β-Ga2O3 (-201) single crystals grown by edge-defined-fed growth method 
Sub Title (in English)  
Keyword(1) Gallium oxide  
Keyword(2) Schottky barrier diode  
Keyword(3) electron mobility  
1st Author's Name Yuta Koga  
1st Author's Affiliation Saga University (Saga Univ.)
2nd Author's Name Kazuya Harada  
2nd Author's Affiliation Saga University (Saga Univ.)
3rd Author's Name Kenji Hanada  
3rd Author's Affiliation Saga University (Saga Univ.)
4th Author's Name Toshiyuki Oishi  
4th Author's Affiliation Saga University (Saga Univ.)
5th Author's Name Makoto Kasu  
5th Author's Affiliation Saga University (Saga Univ.)
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Date Time 2015-05-28 16:05:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2015-22,IEICE-CPM2015-7,IEICE-SDM2015-24 
Volume (vol) IEICE-115 
Number (no) no.63(ED), no.64(CPM), no.65(SDM) 
Page pp.31-34 
#Pages IEICE-4 
Date of Issue IEICE-ED-2015-05-21,IEICE-CPM-2015-05-21,IEICE-SDM-2015-05-21 

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