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| Presentation | 2015-05-28 16:05 Schottky barrier diodes of high mobility β-Ga2O3 (-201) single crystals grown by edge-defined-fed growth method Yuta Koga, Kazuya Harada, Kenji Hanada, Toshiyuki Oishi, Makoto Kasu (Saga Univ.)  ED2015-22 CPM2015-7 SDM2015-24 Link to ES Tech. Rep. Archives: ED2015-22 CPM2015-7 SDM2015-24 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | High Hall electron mobility and its high performances of Schottky barrier diodes on edge-defined film-fed grown (2 ̅01) -Ga2O3 single crystals have been demonstrated. High electron mobility of 886 cm2/V/s at 85 K, and 153 cm2/V/s at 300 K. Temperature dependence of electron mobility was fitted by theoretical values for specific scattering mechanisms, and we found that the electron mobility for > 200K is limited by optical phonon scattering and for < 100 K by ionized impurity scattering. On the high-purity crystal, we have fabricated Schottky barrier diodes with Ni Schottky contacts. The current density of forward voltage of 70.3 A/cm2 at 2.0V was obtained and a Schottky barrier height of 1.25 eV and nearly idea ideality factor of 1.01 were extracted. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Gallium oxide / Schottky barrier diode / electron mobility / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 63, ED2015-22, pp. 31-34, May 2015. | |
| Paper # | ED2015-22 | |
| Date of Issue | 2015-05-21 (ED, CPM, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2015-22 CPM2015-7 SDM2015-24 Link to ES Tech. Rep. Archives: ED2015-22 CPM2015-7 SDM2015-24 |
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| Conference Information | |
| Committee | ED CPM SDM |
| Conference Date | 2015-05-28 - 2015-05-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Venture Business Laboratory, Toyohashi University of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | crystal growth、devices characterization , etc. |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2015-05-ED-CPM-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Schottky barrier diodes of high mobility β-Ga2O3 (-201) single crystals grown by edge-defined-fed growth method |
| Sub Title (in English) | |
| Keyword(1) | Gallium oxide |
| Keyword(2) | Schottky barrier diode |
| Keyword(3) | electron mobility |
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| 1st Author's Name | Yuta Koga |
| 1st Author's Affiliation | Saga University (Saga Univ.) |
| 2nd Author's Name | Kazuya Harada |
| 2nd Author's Affiliation | Saga University (Saga Univ.) |
| 3rd Author's Name | Kenji Hanada |
| 3rd Author's Affiliation | Saga University (Saga Univ.) |
| 4th Author's Name | Toshiyuki Oishi |
| 4th Author's Affiliation | Saga University (Saga Univ.) |
| 5th Author's Name | Makoto Kasu |
| 5th Author's Affiliation | Saga University (Saga Univ.) |
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| Speaker | Author-1 |
| Date Time | 2015-05-28 16:05:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2015-22, CPM2015-7, SDM2015-24 |
| Volume (vol) | vol.115 |
| Number (no) | no.63(ED), no.64(CPM), no.65(SDM) |
| Page | pp.31-34 |
| #Pages | 4 |
| Date of Issue | 2015-05-21 (ED, CPM, SDM) |
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