Paper Abstract and Keywords |
Presentation |
2015-05-28 13:50
Large Signal Modeling of GaN-on-Si Transistor for Microwave Heating Christer M. Andersson, Yutaro Yamaguchi, Kazuhiro Iyomasa, Yoshifumi Kawamura, Shuichi Sakata, Koji Yamanaka, Hiroshi Fukumoto (Mitsubishi Electric) MW2015-21 Link to ES Tech. Rep. Archives: MW2015-21 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this paper, the large signal model of a GaN-on-Si transistor to be employed in microwave heating systems is reported. Since continuous wave (CW) mode is employed in microwave heating systems, transistor self-heating effects become increasingly important. In this paper, the large signal GaN-on-Si model includes thermal effects fitted based on measurement result of temperature dependent DC and RF characteristics in combination with IR thermal imaging. It is shown that the final model can well reproduce CW Pin-Pout characteristics of the GaN-on-Si device. This model will be useful in the design of high power and high efficiency GaN-on-Si amplifiers for use in microwave heating systems. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / high power amplifier / large signal model / thermal effects / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 66, MW2015-21, pp. 1-5, May 2015. |
Paper # |
MW2015-21 |
Date of Issue |
2015-05-21 (MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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MW2015-21 Link to ES Tech. Rep. Archives: MW2015-21 |