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Paper Abstract and Keywords
Presentation 2015-04-30 10:40
Lateral solid-phase crystallization of a-GeSn on insulator for next generation flexible electronics
Ryo Matsumura (Kyushu Univ./ JSPS), Hironori Chikita, Yuki Kai, Masaya Sasaki, Taizoh Sadoh, Hiroshi Ikenoue, Masanobu Miyao (Kyushu Univ.) SDM2015-10 OME2015-10 Link to ES Tech. Rep. Archives: SDM2015-10 OME2015-10
Abstract (in Japanese) (See Japanese page) 
(in English) In order to realize next generation flexible electronics, high carrier mobility materials, such as GeSn, has to be crystallized below softening temperature of reasonable flexible plastic substrates (softening temperature: ~200oC). By combining laser annealing, we have realized solid-phase crystallization of a-GeSn below 200oC on insulating substrates. This technique will be useful to realize next generation flexible electronics.
Keyword (in Japanese) (See Japanese page) 
(in English) GeSn / solid-phase crystallization / laser annealing / / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 18, SDM2015-10, pp. 39-40, April 2015.
Paper # SDM2015-10 
Date of Issue 2015-04-22 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2015-10 OME2015-10 Link to ES Tech. Rep. Archives: SDM2015-10 OME2015-10

Conference Information
Committee OME SDM  
Conference Date 2015-04-29 - 2015-04-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Oh-hama Nobumoto Memorial Hall 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Thin FIlms, Functional Electronics Devices, New Functional Materials and Evaluation, BIomtechnology 
Paper Information
Registration To SDM 
Conference Code 2015-04-OME-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Lateral solid-phase crystallization of a-GeSn on insulator for next generation flexible electronics 
Sub Title (in English)  
Keyword(1) GeSn  
Keyword(2) solid-phase crystallization  
Keyword(3) laser annealing  
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1st Author's Name Ryo Matsumura  
1st Author's Affiliation Kyushu University/ JSPS Research Fellow (Kyushu Univ./ JSPS)
2nd Author's Name Hironori Chikita  
2nd Author's Affiliation Kyushu University (Kyushu Univ.)
3rd Author's Name Yuki Kai  
3rd Author's Affiliation Kyushu University (Kyushu Univ.)
4th Author's Name Masaya Sasaki  
4th Author's Affiliation Kyushu University (Kyushu Univ.)
5th Author's Name Taizoh Sadoh  
5th Author's Affiliation Kyushu University (Kyushu Univ.)
6th Author's Name Hiroshi Ikenoue  
6th Author's Affiliation Kyushu University (Kyushu Univ.)
7th Author's Name Masanobu Miyao  
7th Author's Affiliation Kyushu University (Kyushu Univ.)
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Speaker Author-1 
Date Time 2015-04-30 10:40:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2015-10, OME2015-10 
Volume (vol) vol.115 
Number (no) no.18(SDM), no.19(OME) 
Page pp.39-40 
#Pages
Date of Issue 2015-04-22 (SDM, OME) 


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