Paper Abstract and Keywords |
Presentation |
2015-04-30 10:40
Lateral solid-phase crystallization of a-GeSn on insulator for next generation flexible electronics Ryo Matsumura (Kyushu Univ./ JSPS), Hironori Chikita, Yuki Kai, Masaya Sasaki, Taizoh Sadoh, Hiroshi Ikenoue, Masanobu Miyao (Kyushu Univ.) SDM2015-10 OME2015-10 Link to ES Tech. Rep. Archives: SDM2015-10 OME2015-10 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In order to realize next generation flexible electronics, high carrier mobility materials, such as GeSn, has to be crystallized below softening temperature of reasonable flexible plastic substrates (softening temperature: ~200oC). By combining laser annealing, we have realized solid-phase crystallization of a-GeSn below 200oC on insulating substrates. This technique will be useful to realize next generation flexible electronics. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GeSn / solid-phase crystallization / laser annealing / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 18, SDM2015-10, pp. 39-40, April 2015. |
Paper # |
SDM2015-10 |
Date of Issue |
2015-04-22 (SDM, OME) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2015-10 OME2015-10 Link to ES Tech. Rep. Archives: SDM2015-10 OME2015-10 |
Conference Information |
Committee |
OME SDM |
Conference Date |
2015-04-29 - 2015-04-30 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Oh-hama Nobumoto Memorial Hall |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Thin FIlms, Functional Electronics Devices, New Functional Materials and Evaluation, BIomtechnology |
Paper Information |
Registration To |
SDM |
Conference Code |
2015-04-OME-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Lateral solid-phase crystallization of a-GeSn on insulator for next generation flexible electronics |
Sub Title (in English) |
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Keyword(1) |
GeSn |
Keyword(2) |
solid-phase crystallization |
Keyword(3) |
laser annealing |
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1st Author's Name |
Ryo Matsumura |
1st Author's Affiliation |
Kyushu University/ JSPS Research Fellow (Kyushu Univ./ JSPS) |
2nd Author's Name |
Hironori Chikita |
2nd Author's Affiliation |
Kyushu University (Kyushu Univ.) |
3rd Author's Name |
Yuki Kai |
3rd Author's Affiliation |
Kyushu University (Kyushu Univ.) |
4th Author's Name |
Masaya Sasaki |
4th Author's Affiliation |
Kyushu University (Kyushu Univ.) |
5th Author's Name |
Taizoh Sadoh |
5th Author's Affiliation |
Kyushu University (Kyushu Univ.) |
6th Author's Name |
Hiroshi Ikenoue |
6th Author's Affiliation |
Kyushu University (Kyushu Univ.) |
7th Author's Name |
Masanobu Miyao |
7th Author's Affiliation |
Kyushu University (Kyushu Univ.) |
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Speaker |
Author-1 |
Date Time |
2015-04-30 10:40:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2015-10, OME2015-10 |
Volume (vol) |
vol.115 |
Number (no) |
no.18(SDM), no.19(OME) |
Page |
pp.39-40 |
#Pages |
2 |
Date of Issue |
2015-04-22 (SDM, OME) |
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