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| Presentation | 2015-04-30 10:00 [Invited Talk] Formation of high Sn content SiSn films and its band structure -- Aiming for direct-band-gap semiconductor -- Masashi Kurosawa, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)  SDM2015-9 OME2015-9 Link to ES Tech. Rep. Archives: SDM2015-9 OME2015-9 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | This paper reports our recent progress in advanced Sn-assisted low-temperature crystallization methods for Si$_{1-x}$Sn$_{x}$ alloys ($x: 0-0.3$) on insulators and Ge substrates. Micro-probe Raman spectra and Auger electron spectroscopy depth profiles reveal the presence of the substitutional Sn content as high as 22% in the polycrystalline- and epitaxial-Si$_{1-x}$Sn$_{x}$ layers after annealing at 220℃ for 5 hrs. In addition, the band gap shrinkage due to the Sn incorporation has been demonstrated by Fourier transform infrared spectroscopy measurements. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | group-IV semiconductor / silicon tin (SiSn) / solid phase crystallization / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 18, SDM2015-9, pp. 35-37, April 2015. | |
| Paper # | SDM2015-9 | |
| Date of Issue | 2015-04-22 (SDM, OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2015-9 OME2015-9 Link to ES Tech. Rep. Archives: SDM2015-9 OME2015-9 |
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| Conference Information | |
| Committee | OME SDM |
| Conference Date | 2015-04-29 - 2015-04-30 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Oh-hama Nobumoto Memorial Hall |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Thin FIlms, Functional Electronics Devices, New Functional Materials and Evaluation, BIomtechnology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2015-04-OME-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of high Sn content SiSn films and its band structure |
| Sub Title (in English) | Aiming for direct-band-gap semiconductor |
| Keyword(1) | group-IV semiconductor |
| Keyword(2) | silicon tin (SiSn) |
| Keyword(3) | solid phase crystallization |
| Keyword(4) | |
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| 1st Author's Name | Masashi Kurosawa |
| 1st Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 2nd Author's Name | Wakana Takeuchi |
| 2nd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 3rd Author's Name | Mitsuo Sakashita |
| 3rd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 4th Author's Name | Osamu Nakatsuka |
| 4th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 5th Author's Name | Shigeaki Zaima |
| 5th Author's Affiliation | Nagoya University (Nagoya Univ.) |
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| Speaker | Author-1 |
| Date Time | 2015-04-30 10:00:00 |
| Presentation Time | 40 minutes |
| Registration for | SDM |
| Paper # | SDM2015-9, OME2015-9 |
| Volume (vol) | vol.115 |
| Number (no) | no.18(SDM), no.19(OME) |
| Page | pp.35-37 |
| #Pages | 3 |
| Date of Issue | 2015-04-22 (SDM, OME) |
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