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| Presentation | 2015-04-30 13:00 Grain Growth Control by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation on Amorphous Silicon Strips and High-Speed Operation of CMOS Circuit Seiji Morisaki, Shohei Hayashi, Shogo Yamamoto, Taichi Nakatani, Seiichiro Higashi (Hiroshima Univ.)  SDM2015-13 OME2015-13 Link to ES Tech. Rep. Archives: SDM2015-13 OME2015-13 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The formation or random grain boundaries was successfully suppressed using grain growth control of high-speed lateral crystallization (HSLC) by micro-thermal-plasma-jet (µ-TPJ) irradiation on1 µm-wide amorphous silicon strips. This strip pattern is quite effective to improve the characteristics of thin film transistors (TFTs). The characteristic variability of TFTs with strip pattern was suppressed to 1/3 compared with conventional pattern. NMOS TFTs achieved field effect mobility of 503 ± 63 cm2V-1s-1, threshold voltage of 1.7 ± 0.06 V and S-factor of 196 ± 15 mV/dec.、152 ± 17 mV/dec. High-speed operation of CMOS circuit was demonstrated . 9-stage ring oscillator with strip pattern was oscillated by 107.5 MHz at supply voltage of 5 V. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Thermal Plasma Jet / Thin Film Transistor / CMOS / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 18, SDM2015-13, pp. 49-52, April 2015. | |
| Paper # | SDM2015-13 | |
| Date of Issue | 2015-04-22 (SDM, OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2015-13 OME2015-13 Link to ES Tech. Rep. Archives: SDM2015-13 OME2015-13 |
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| Conference Information | |
| Committee | OME SDM |
| Conference Date | 2015-04-29 - 2015-04-30 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Oh-hama Nobumoto Memorial Hall |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Thin FIlms, Functional Electronics Devices, New Functional Materials and Evaluation, BIomtechnology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2015-04-OME-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Grain Growth Control by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation on Amorphous Silicon Strips and High-Speed Operation of CMOS Circuit |
| Sub Title (in English) | |
| Keyword(1) | Thermal Plasma Jet |
| Keyword(2) | Thin Film Transistor |
| Keyword(3) | CMOS |
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| 1st Author's Name | Seiji Morisaki |
| 1st Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 2nd Author's Name | Shohei Hayashi |
| 2nd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 3rd Author's Name | Shogo Yamamoto |
| 3rd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 4th Author's Name | Taichi Nakatani |
| 4th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 5th Author's Name | Seiichiro Higashi |
| 5th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
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| Speaker | Author-1 |
| Date Time | 2015-04-30 13:00:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2015-13, OME2015-13 |
| Volume (vol) | vol.115 |
| Number (no) | no.18(SDM), no.19(OME) |
| Page | pp.49-52 |
| #Pages | 4 |
| Date of Issue | 2015-04-22 (SDM, OME) |
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